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Full-Text Articles in Physics

Bias Voltage Dependence Of Tunneling Anisotropic Magnetoresistance In Magnetic Tunnel Junctions With Mgo And Al2O3 Tunnel Barriers, Li Gao, Xin Jiang, See-Hun Yang, John D. Burton, Evgeny Y. Tsymbal, Stuart S. P. Parkin Nov 2007

Bias Voltage Dependence Of Tunneling Anisotropic Magnetoresistance In Magnetic Tunnel Junctions With Mgo And Al2O3 Tunnel Barriers, Li Gao, Xin Jiang, See-Hun Yang, John D. Burton, Evgeny Y. Tsymbal, Stuart S. P. Parkin

Evgeny Tsymbal Publications

Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state ...


Reversal Of Spin Polarization In Fe/Gaas (001) Driven By Resonant Surface States: First-Principles Calculations, Athanasios N. Chantis, Kirill D. Belashchenko, D. L. Smith, Evgeny Y. Tsymbal, Mark Van Schilfgaarde, R. C. Albers Nov 2007

Reversal Of Spin Polarization In Fe/Gaas (001) Driven By Resonant Surface States: First-Principles Calculations, Athanasios N. Chantis, Kirill D. Belashchenko, D. L. Smith, Evgeny Y. Tsymbal, Mark Van Schilfgaarde, R. C. Albers

Evgeny Tsymbal Publications

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs ...


Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal Oct 2007

Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal

Faculty Publications: Materials Research Science and Engineering Center

First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance TAMR. An important aspect of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few millivolts. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a ...


Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa Jun 2007

Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa

Evgeny Tsymbal Publications

Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe–MgO–Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe–MgO–Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small MgO thickness but changes sign and then vanishes for large barrier thickness. First-principles calculations based on density functional theory demonstrate that the presence of neutral O vacancies (F-centers) in the MgO barrier can explain ...


Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart Feb 2007

Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart

Evgeny Tsymbal Publications

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the ...


Magnetic Enhancement In Cobalt-Manganese Alloy Clusters, Shuangye Yin, Ramiro Moro, Xiaoshan Xu, Walter A. De Heer Jan 2007

Magnetic Enhancement In Cobalt-Manganese Alloy Clusters, Shuangye Yin, Ramiro Moro, Xiaoshan Xu, Walter A. De Heer

Xiaoshan Xu Papers

Magnetic moments of CoNMnM and CoNVM clusters (N ≤ 60; M ≤ N/3) are measured in molecular beams using the Stern-Gerlach deflection method. Surprisingly, the per atom average moments of CoNMnM clusters are found to increase with Mn concentration, in contrast to bulk CoMn. The enhancement with Mn doping is found to be independent of cluster size and composition in the size range studied. Meanwhile, CoNVM clusters show reduction of average moments with increasing V doping, consistent with what is expected in bulk CoV. The results are discussed within ...


Ferroelectric Properties Of Langmuir-Blodgett Copolymer Films At The Nanoscale, A. Tolstousov, R. V. Gaynutdinov, R. Tadros-Morgane, Herbert Kliem, Stephen Ducharme, Vladimir M. Fridkin Jan 2007

Ferroelectric Properties Of Langmuir-Blodgett Copolymer Films At The Nanoscale, A. Tolstousov, R. V. Gaynutdinov, R. Tadros-Morgane, Herbert Kliem, Stephen Ducharme, Vladimir M. Fridkin

Stephen Ducharme Publications

Langmuir-Blodgett (LB) films are well known structures prepared as a result of successive transfer of monolayers (ML) from the gas-liquid interface onto solid substrates. One impressive possibility of LB method is the opportunity to vary the thickness of the film to an accuracy of one transfer, which could coincide with one ML. The ferroelectric properties of a copolymer of vinylidene fluoride and trifluorethylene P[VDF-TrFE] prepared by LB deposition are investigated in the region of a few monolayers.


Atomic Motion In Ferromagnetic Break Junctions: Comment And Response, S.-F. Shi, David C. Ralph, Andrei Sokolov, Chunjuan Zhang, Evgeny Y. Tsymbal, Jody G. Redepenning, Bernard Doudin Jan 2007

Atomic Motion In Ferromagnetic Break Junctions: Comment And Response, S.-F. Shi, David C. Ralph, Andrei Sokolov, Chunjuan Zhang, Evgeny Y. Tsymbal, Jody G. Redepenning, Bernard Doudin

Evgeny Tsymbal Publications

Authors’ response

In their comment, Shi and Ralph emphasize that conductance of Ni point contacts produced by an electro-migration technique can occasionally exhibit two-level fluctuations (TLF), mimicking the discrete steps in the conductance of the point contacts as a function of the applied magnetic-field direction. They explain the nature of these steps in terms of atomic motion rather than intrinsic electronic effect. We emphasize in this reply that our results, obtained on a different magnetic material synthesized by a different method, do not show a