Physics Commons^™

Ferroelectric Polymer Langmuir–Blodgett Films For Nonvolatile Memory Applications, Stephen Ducharme, Timothy J. Reece, Christina M. Othon, R. K. Rannow

Department of Physics and Astronomy: Faculty Publications

We review the potential for integrating ferroelectric polymer Langmuir–Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory (NV-FRAM or NV-FeRAM) and data-storage devices. The prototype material is a copolymer consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE), or P(VDF-TrFE 70:30). Recent work with LB films and more conventional solventformed films shows that the VDF copolymers are promising materials for nonvolatile memory applications. The prototype device is themetal–ferroelectric–insulator–semiconductor (MFIS) capacitance memory. Field-effect transistor (FET)-based devices are also discussed. The LB films afford devices with low-voltage operation, but there are two important technical hurdles that must be …