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Full-Text Articles in Physics

The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell Jan 2013

The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell

Electronic Theses and Dissertations

Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into ...


Infraded Surface Plasmon Polaritons On Semiconductor, Semimetal And Conducting Polymer, Monas Shahzad Jan 2012

Infraded Surface Plasmon Polaritons On Semiconductor, Semimetal And Conducting Polymer, Monas Shahzad

Electronic Theses and Dissertations

Conductors with IR (infrared) plasma frequencies are potentially useful hosts of surface plasmon polaritons (SPPs) with subwavelength mode confinement for sensing applications. The underlying aim of this work is to identify such conductors that also have sharp SPP excitation resonances for biosensor applications at infrared (3-11 m) wavelengths, where biological analytes are strongly differentiated by their IR absorption spectra. In this work, various materials were investigated such as a heavily doped semiconductor, a semimetal, a conducting polymer and its composite. Heavily doped silicon was investigated by tuning its plasma frequency to the infrared region by heavily doping. The measured complex ...


High Power Mode-Locked Semiconductor Lasers And Their Applications, Shinwook Lee Jan 2008

High Power Mode-Locked Semiconductor Lasers And Their Applications, Shinwook Lee

Electronic Theses and Dissertations

In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme Chirped Pulse Amplification (XCPA) is investigated. An eXtreme Chirped Pulse Oscillator (XCPO) implemented with a Theta cavity also based on a semiconductor gain is presented for generating more than 30ns frequency-swept pulses with more than 100pJ of pulse energy and 3.6ps compressed pulses directly from the oscillator. The XCPO shows the two distinct characteristics which are the scalability of the output energy and the mode-locked spectrum with respect to repetition rate. The laser cavity design allows for low repetition rate operation <100MHz. The cavity significantly reduces nonlinear carrier dynamics, integrated self phase modulation (SPM), and fast gain recovery in a Semiconductor optical Amplifier (SOA). Secondly, a functional device, called a Grating Coupled Surface Emitting Laser (GCSEL) is investigated. For the first time, passive and hybrid mode-locking of a GCSEL is achieved by using saturable absorption in the passive section of GCSEL. To verify the present limitation of the GCSEL for passive and hybrid mode-locking, a dispersion matched cavity is explored. In addition, a Grating Coupled surface emitting Semiconductor Optical Amplifier (GCSOA) is also investigated to achieve high energy pulse. An energy extraction experiment for GCSOA using stretched pulses generated from the colliding pulse semiconductor mode-locked laser via a chirped fiber bragg grating, which exploits the XCPA advantages is also demonstrated. Finally, passive optical cavity amplification using an enhancement cavity is presented. In order to achieve the interferometric stability, the Hänsch-Couillaud Method is employed to stabilize the passive optical cavity. The astigmatism-free optical cavity employing an acousto-optic modulator (AOM) is designed and demonstrated. In the passive optical cavity, a 7.2 of amplification factor is achieved with a 50 KHz dumping rate.


Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures, Maxim Dolguikh Jan 2005

Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures, Maxim Dolguikh

Electronic Theses and Dissertations

Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole ...