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Syracuse University

Electronic Devices and Semiconductor Manufacturing

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Electron Drift-Mobility Measurements In Polycrystalline Cuin1-Xgaxse2 Solar Cells, Steluta A. Dinca, Eric A. Schiff, William N. Shafarman, Brian Egaas, Rommel Noufi, David L. Young Mar 2012

Electron Drift-Mobility Measurements In Polycrystalline Cuin1-Xgaxse2 Solar Cells, Steluta A. Dinca, Eric A. Schiff, William N. Shafarman, Brian Egaas, Rommel Noufi, David L. Young

Physics

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn1-xGaxSe2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.