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Performance Characteristics Of Nanocrystalline Diamond Vacuum Field Emission Transistor Array, S Hsu, W Kang, J Davidson, J Huang, David Kerns
Performance Characteristics Of Nanocrystalline Diamond Vacuum Field Emission Transistor Array, S Hsu, W Kang, J Davidson, J Huang, David Kerns
David V. Kerns
Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. …
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
David V. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …