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Full-Text Articles in Physics
Fast Super-Resolution With Affine Motion Using An Adaptive Wiener Filter And Its Application To Airborne Imaging, Russell C. Hardie, Kenneth J. Barnard, Raúl Ordóñez
Fast Super-Resolution With Affine Motion Using An Adaptive Wiener Filter And Its Application To Airborne Imaging, Russell C. Hardie, Kenneth J. Barnard, Raúl Ordóñez
Raúl Ordóñez
Fast nonuniform interpolation based super-resolution (SR) has traditionally been limited to applications with translational interframe motion. This is in part because such methods are based on an underlying assumption that the warping and blurring components in the observation model commute. For translational motion this is the case, but it is not true in general. This presents a problem for applications such as airborne imaging where translation may be insufficient. Here we present a new Fourier domain analysis to show that, for many image systems, an affine warping model with limited zoom and shear approximately commutes with the point spread function …
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
David V. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi (Adjunct), A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra E. Kerns, David V. Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi (Adjunct), A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra E. Kerns, David V. Kerns, Jr.
Sherra E. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …