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Full-Text Articles in Physics
Physical Mechanisms Leading To The Coulomb Blockade And Coulomb Staircase Structures In Strongly Coupled Multi-Island Single-Electron Devices, Madhusudan A. Savaikar, Paul L. Bergstrom, John A. Jaszczak
Physical Mechanisms Leading To The Coulomb Blockade And Coulomb Staircase Structures In Strongly Coupled Multi-Island Single-Electron Devices, Madhusudan A. Savaikar, Paul L. Bergstrom, John A. Jaszczak
Paul Bergstrom
Controlled transport of electrons through tunnel junctions and their confinement by mesoscopic structures have opened up immense possibilities of single-electron device (SED) applications. The realization of a practical working SED has remained challenging largely owing to the poor understanding of the physics of operation of singe-electron tunneling devices, especially of those with multiple nanometer-sized islands. In this simulation study of one-dimensional (1D) multi-island chains, we propose physical mechanisms that lead to the coulomb blockade (CB) and coulomb staircase (CS) characteristics that are enhanced by the geometrical disorder in the chain. With increasing source-drain (VDS = VD − VS) bias, a …
New Flexible Channels For Room Temperature Tunneling Field Effect Transistors, Boyi Hao, Anjana Asthana, Paniz Khanmohammadi, Paul Bergstrom, Douglas R. Banyai, Madhusudan A. Savaikar, John A. Jaszczak, Yoke Khin Yap
New Flexible Channels For Room Temperature Tunneling Field Effect Transistors, Boyi Hao, Anjana Asthana, Paniz Khanmohammadi, Paul Bergstrom, Douglas R. Banyai, Madhusudan A. Savaikar, John A. Jaszczak, Yoke Khin Yap
Paul Bergstrom
Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various …
Simulation Of Charge Transport In Multi-Island Tunneling Devices: Application To Disordered One-Dimensional Systems At Low And High Biases, Madhusudan A. Savaikar, Douglas R. Banyai, Paul Bergstrom, John A. Jaszczak
Simulation Of Charge Transport In Multi-Island Tunneling Devices: Application To Disordered One-Dimensional Systems At Low And High Biases, Madhusudan A. Savaikar, Douglas R. Banyai, Paul Bergstrom, John A. Jaszczak
Paul Bergstrom
Although devices have been fabricated displaying interesting single-electron transport characteristics, there has been limited progress in the development of tools that can simulate such devices based on their physical geometry over a range of bias conditions up to a few volts per junction. In this work, we present the development of a multi-island transport simulator, MITS, a simulator of tunneling transport in multi-island devices that takes into account geometrical and material parameters, and can span low and high source-drain biases. First, the capabilities of MITS are demonstrated by modeling experimentaldevices described in the literature, and showing that the simulated device …