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Selected Works

2007

Paul J. Simmonds

III-V semiconductors

Articles 1 - 2 of 2

Full-Text Articles in Physics

Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie Aug 2007

Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie

Paul J. Simmonds

The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10−6 ns−1 for 1310 nm photons.


Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie Apr 2007

Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie

Paul J. Simmonds

The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots (QDs) on In0.524Al0.476As. InAs QDs both buried in, and on top of, In0.524Al0.476As were analyzed using photoluminescence (PL) and atomic force microscopy. InAs QD morphology and peak PL emission wavelength both scale linearly with deposition thickness in monolayers (MLs). InAs deposition thickness can be used to tune QD PL wavelength by 170 nm/ML, over a range of ...