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Transport Properties Of Bi2−Xinxse3 Single Crystals., J. Navrátil, T. Plecháček, J. Horák, S. Karamazov, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Transport Properties Of Bi2−Xinxse3 Single Crystals., J. Navrátil, T. Plecháček, J. Horák, S. Karamazov, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi2−xInxSe3 (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi2Se3 crystal lattice on the individual components of thermal conductivity is evaluated and discussed. Copyright 2001 Academic Press.
Preparation And Some Physical Properties Of Tetradymite-Type Sb2te3 Single Crystals Doped With Cds., P. LošŤÁK, Č. Drašar, A. Krejc ̆ Ova, L. Beneš, Jeffrey Dyck, W. Chen, C. Uher
Preparation And Some Physical Properties Of Tetradymite-Type Sb2te3 Single Crystals Doped With Cds., P. LošŤÁK, Č. Drašar, A. Krejc ̆ Ova, L. Beneš, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Single crystals of Sb2Te3 doped with CdS were prepared by a modified Bridgman method from the elements Sb and Te of 5N purity and the CdS compound of 4.5N purity. Samples were characterized by X-ray diffraction and by measurement of reflectance in the plasma resonance frequency region at room temperature. Furthermore, we made measurements of temperature dependence of the electrical resistivity, Hall and Seebeck coefficients, and thermal conductivity in the temperature range of 4.2–300K. In the process of crystal growth, CdS dissociated and it was assumed that the Cd-atoms formed substitutional defects in the Sb-sublattice (CdSb′) while the S-atoms formed …