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Resistivity Of Boron-Doped Diamond Microcrystals, M. D. Jaeger, S. Hyun, Anthony Roy Day, M. F. Thorpe, B. Golding
Resistivity Of Boron-Doped Diamond Microcrystals, M. D. Jaeger, S. Hyun, Anthony Roy Day, M. F. Thorpe, B. Golding
Anthony Roy Day
We describe measurements of the electrical resistivity of micron-size crystallites of boron-doped diamond. Electron-beam lithography was employed for writing sample-specific contacts on small, well-faceted diamond crystals grown by chemical-vapor deposition on silicon substrates. After generating a three-dimensional computer model of the crystallite, a finite-element analysis was used to calculate the internal electrostatic potential distribution. Multiterminal resistance measurements, in conjunction with a computed geometrical factor, enabled the absolute resistivity to be determined. We find that the resistivities obtained from two different crystallites agree to better than 10%. The results are compared with transport measurements on a large-area homoepitaxial diamond film grown …
Resistivity Determination From Small Crystallites, S. Hyun, M. Thorpe, B. Golding, M. Jaeger, Anthony Day
Resistivity Determination From Small Crystallites, S. Hyun, M. Thorpe, B. Golding, M. Jaeger, Anthony Day
Anthony Roy Day
We determine the resistivity of small micrometer-sized conductors with arbitrary shapes. It is shown that with n terminals attached to the sample, there are n(n1)/2 independent measurements of the resistance that can be made; from which the sample resistivity and the contact resistances can be extracted. An image of the sample is digitized and a finite element analysis is used to determine the geometrical factors that arise from the nonuniform current flow and hence control the resistance measurements. It is shown that all the elements of the resistance matrix for the sample are generated from the diagonal elements alone for …