Physics Commons^™

Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus

Jeffrey Dyck

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report …

Changes In The Fermi Surface At The Magnetization Reorientation Transition In Fe/Cu(100), Reginaldt H. Madjoe, Alexey N. Koveshnikov, Christopher Harwell, Randall W. Hall, Roger L. Stockbauer, Richard L. Lutz

Randall W. Hall