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Vanadium Oxide Thin-Film Variable Resistor-Based Rf Switches, Kuanchang Pan, Weisong Wang, Eunsung Shin, Kelvin Freeman, Guru Subramanyam Dec 2015

Vanadium Oxide Thin-Film Variable Resistor-Based Rf Switches, Kuanchang Pan, Weisong Wang, Eunsung Shin, Kelvin Freeman, Guru Subramanyam

Guru Subramanyam

Vanadium dioxide (VO2) is a unique phase change material (PCM) that possesses a metal-to-insulator transition property. Pristine VO2 has a negative temperature coefficient of resistance, and it undergoes an insulator-to-metal phase change at a transition temperature of 68°C. Such a property makes the VO2 thin-film-based variable resistor (varistor) a good candidate in reconfigurable electronics to be integrated with different RF devices such as inductors, varactors, and antennas. Series single-pole single-throw (SPST) switches with integrated VO2 thin films were designed, fabricated, and tested. The overall size of the device is 380 μm × 600 μm. The SPST switches were fabricated on ...