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Full-Text Articles in Physics
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Albert B Chen
Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …
Capillary Force In High Aspect-Ratio Micropillar Arrays, Dinesh Chandra
Capillary Force In High Aspect-Ratio Micropillar Arrays, Dinesh Chandra
Dinesh Chandra
High aspect-ratio (HAR) micropillar arrays are important for many applications including, mechanical sensors and actuators, tunable wetting surfaces and substrates for living cell studies. However, due to their mechanical compliance and large surface area, the micropillars are susceptible to deformation due to surface forces, such as adhesive force and capillary force. In this thesis we have explored the capillary force driven mechanical instability of HAR micropillar arrays. We have shown that when a liquid is evaporated off the micropillar arrays, the pillars bend and cluster together due to a much smaller capillary meniscus interaction force while still surrounded by a …
Angular-Dependences Of Giant In-Plane And Interlayer Magnetoresistances In Bi2te3 Bulk Single Crystals, Zengji Yue
Angular-Dependences Of Giant In-Plane And Interlayer Magnetoresistances In Bi2te3 Bulk Single Crystals, Zengji Yue
Zengji Yue
Angular-dependences of in-plane and interlayer magnetotransport properties in n-type Bi2Te3 bulk single crystals have been investigated over a broad range of temperatures and magnetic fields. Giant in-plane magnetoresistances (MR) of up to 500% and interlayer MR of up to 200% were observed, respectively. The observed MR exhibits quadratic field dependences in low fields and linear field dependences in high fields. The angular dependences of the MR represent strong anisotropy and twofold oscillations. The observed angle-dependent, giant MR might result from the strong coulomb scattering of electrons as well as impurity scattering in the bulk conduction bands of n-type Bi2Te3. The …
An Analytical Model For Complete Solute Trapping During Rapid Solidification Of Binary Alloys, Sergey Sobolev
An Analytical Model For Complete Solute Trapping During Rapid Solidification Of Binary Alloys, Sergey Sobolev
Sergey Sobolev
An analytical model has been developed to describe solute partitioning during rapid solidification of binary alloys under local nonequilibrium conditions. The model takes into account the deviations from equilibrium both at the solid–liquid interface according to the kinetic approach of Jackson et al. based on Monte Carlo simulations and in the bulk liquid using local nonequilibrium diffusion model (LNDM). The dimensionless growth parameter b found in the Monte Carlo simulations as the important parameter for solute trapping has been modified for the local nonequilibrium diffusion case. An analytical expression has been developed for the velocity-dependent partition coefficient K which predicts …