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Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Bradley Minch
In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
Bradley Minch
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.