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Full-Text Articles in Physics
Highly Directional Receiver And Source Antennas Using Photonic Band Gap Crystals, Rana Biswas, Gary L. Tuttle, Ekmel Ozbay, Burak Temelkuran, Mihail Sigalas, Kai-Ming Ho
Highly Directional Receiver And Source Antennas Using Photonic Band Gap Crystals, Rana Biswas, Gary L. Tuttle, Ekmel Ozbay, Burak Temelkuran, Mihail Sigalas, Kai-Ming Ho
Gary Tuttle
A directional antenna made with photonic band gap structures has been presented. The directional antenna is formed with two photonic band gap structures oriented back to back and separated from each other by a distance to form a resonant cavity between the photonic band gap structures. An antenna element is placed in the resonant cavity. The resonant frequency of the cavity is tuned by adjusting the distance between the photonic band gap structures. The resonant cavity can be asymmetrical or symmetrical.
Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles
Ferromagnetism Of Magnetically Doped Topological Insulators In Crxbi2− Xte3 Thin Films, Yan Ni, Z. Zhang, Ikenna C. Nlebedim, M. Ravi Hadimani, Gary L. Tuttle, David C. Jiles
Gary Tuttle
We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3thin films. CrxBi2−xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2−xTe3. When x = 0.14 and 0.29,ferromagnetism appears in CrxBi2−xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism …