Physics Commons^™

Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio

Bradley Minch

In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …