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Full-Text Articles in Physics

Growth And Characterization Of Baznga, Na Hyun Jo, Qisheng Lin, Udhara S. Kaluarachchi, William R. Meier, Soham Manni, Savannah S. Downing, Anna E. Böhmer, Tai Kong, Yang Sun, Valentin Taufour, Cai-Zhuang Wang, Kai-Ming Ho, Sergey L. Bud’Ko, Paul C. Canfield Jan 2017

Growth And Characterization Of Baznga, Na Hyun Jo, Qisheng Lin, Udhara S. Kaluarachchi, William R. Meier, Soham Manni, Savannah S. Downing, Anna E. Böhmer, Tai Kong, Yang Sun, Valentin Taufour, Cai-Zhuang Wang, Kai-Ming Ho, Sergey L. Bud’Ko, Paul C. Canfield

Ames Laboratory Accepted Manuscripts

We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic ...


Oscillatory Electrostatic Potential On Graphene Induced By Group Iv Element Decoration, Chunyan Du, Liwei Yu, Xiaojie Liu, Lili Liu, Cai-Zhuang Wang Jan 2017

Oscillatory Electrostatic Potential On Graphene Induced By Group Iv Element Decoration, Chunyan Du, Liwei Yu, Xiaojie Liu, Lili Liu, Cai-Zhuang Wang

Ames Laboratory Accepted Manuscripts

The structures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-principles calculations. The calculations show that the interaction between graphene and the decoration patches is weak and the semiconductor patches act as agents for weak electron doping without much disturbing graphene electronic π-bands. Redistribution of electrons due to the partial decoration causes the electrostatic potential lower in the decorated graphene areas, thus induced an electric field across the boundary between the decorated and non-decorated domains. Such an alternating electric field can change normal stochastic adatom diffusion to biased diffusion, leading to selective mass transport.