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Full-Text Articles in Physics

Intersublattice Magnetocrystalline Anisotropy Using A Realistic Tight-Binding Method Based On Maximally Localized Wannier Functions, Liqin Ke Feb 2019

Intersublattice Magnetocrystalline Anisotropy Using A Realistic Tight-Binding Method Based On Maximally Localized Wannier Functions, Liqin Ke

Ames Laboratory Accepted Manuscripts

Using a realistic tight-binding Hamiltonian based on maximally localized Wannier functions, we investigate the two-ion magnetocrystalline anisotropy energy (MAE) in L10 transition metal compounds. MAE contributions from throughout the Brillouin zone are obtained using magnetic force theorem calculations with and without perturbation theory. The results from both methods agree with each other, and both reflect features of the Fermi surface. The intrasublattice and intersublattice contributions to MAE are evaluated using a Green's function method. We find that the sign of the intersublattice contribution varies among compounds, and that its amplitude may be significant, suggesting MAE can not ...


The Crystal Facet-Dependent Electrochemical Performance Of Tio2 Nanocrystals For Heavy Metal Detection: Theoretical Prediction And Experimental Proof, Jianjun Liao, Fan Yang, Cai-Zhuang Wang, Shiwei Lin May 2018

The Crystal Facet-Dependent Electrochemical Performance Of Tio2 Nanocrystals For Heavy Metal Detection: Theoretical Prediction And Experimental Proof, Jianjun Liao, Fan Yang, Cai-Zhuang Wang, Shiwei Lin

Ames Laboratory Accepted Manuscripts

Tailored design/fabrication of electroanalytical materials with highly-active exposed crystal planes is of great importance for the development of electrochemical sensing. In this work, combining experimental and theoretical efforts, we reported a facile strategy to fabricate TiO2 nanocrystals with tunable electrochemical performance for heavy metal detection. Density functional theory (DFT) calculations indicated that TiO2 (001) facet showed relative larger adsorption energy and lower diffusion energy barrier toward heavy metal ions, which is favorable for obtaining better electrochemical stripping behaviors. Based on this prediction, a series of TiO2 nanocrystals with different ratios of exposed (001) and (101) facets were synthesized. Electrochemical ...


Growth And Characterization Of Baznga, Na Hyun Jo, Qisheng Lin, Udhara S. Kaluarachchi, William R. Meier, Soham Manni, Savannah S. Downing, Anna E. Böhmer, Tai Kong, Yang Sun, Valentin Taufour, Cai-Zhuang Wang, Kai-Ming Ho, Sergey L. Bud’Ko, Paul C. Canfield Jan 2017

Growth And Characterization Of Baznga, Na Hyun Jo, Qisheng Lin, Udhara S. Kaluarachchi, William R. Meier, Soham Manni, Savannah S. Downing, Anna E. Böhmer, Tai Kong, Yang Sun, Valentin Taufour, Cai-Zhuang Wang, Kai-Ming Ho, Sergey L. Bud’Ko, Paul C. Canfield

Ames Laboratory Accepted Manuscripts

We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic ...


Oscillatory Electrostatic Potential On Graphene Induced By Group Iv Element Decoration, Chunyan Du, Liwei Yu, Xiaojie Liu, Lili Liu, Cai-Zhuang Wang Jan 2017

Oscillatory Electrostatic Potential On Graphene Induced By Group Iv Element Decoration, Chunyan Du, Liwei Yu, Xiaojie Liu, Lili Liu, Cai-Zhuang Wang

Ames Laboratory Accepted Manuscripts

The structures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-principles calculations. The calculations show that the interaction between graphene and the decoration patches is weak and the semiconductor patches act as agents for weak electron doping without much disturbing graphene electronic π-bands. Redistribution of electrons due to the partial decoration causes the electrostatic potential lower in the decorated graphene areas, thus induced an electric field across the boundary between the decorated and non-decorated domains. Such an alternating electric field can change normal stochastic adatom diffusion to biased diffusion, leading to selective mass transport.