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Pinski Et Al. Reply, F. J. Pinski, B. Ginatempo, Duane D. Johnson, J. B. Staunton, G. M. Stocks, B. L. Gyorffy
Pinski Et Al. Reply, F. J. Pinski, B. Ginatempo, Duane D. Johnson, J. B. Staunton, G. M. Stocks, B. L. Gyorffy
Duane D. Johnson
With our calculations [I], we uncovered the electronic mechanism responsible for inducing atomic short-range order (SRO) in the disordered solid solution of NiPt as it is cooled. Usually, but not always, SRO, whether derived theoretically or measured experimentally, indicates the nature of the long-rangeordered (LRO) state that will stabilize at low temperature. Our calculation of the atomic SRO, while agreeing with experiments [2], neglected the relativistic effects in the electronic structure. Lu, Wei, and Zunger (LWZ) [3,4], on the other hand, have calculated the L lo-ordered alloy formation energy and find that only when relativistic effects are included is the …
Tem Observations Of The Mechanism Of Delamination Of Chromium Films From Silicon Substrates, D. Goyal, Alexander H. King
Tem Observations Of The Mechanism Of Delamination Of Chromium Films From Silicon Substrates, D. Goyal, Alexander H. King
Alexander H. King
We have observed the complete delamination of polycrystalline chromium films from single crystal silicon substrates during deposition due to the formation of high internal stresses. These intrinsic stresses can give rise to interfacial defects which assist in the separation of the film from the substrate. Stresses in the film are balanced by stresses in the substrate, which cause mechanical failure in the substrate near the interface. Extensive arrays of dislocations and cracking of the substrate have been observed. We find that the delamination of the films from the substrate is initiated by the formation of damage in the substrate, rather …