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Iowa State University

Series

Materials Science and Engineering

1989

Articles 1 - 2 of 2

Full-Text Articles in Physics

Correlation Between The Activation Enthalpy And Kohlrausch Exponent For Ionic Conductivity In Oxide Glasses, Kia L. Ngai, Steve W. Martin Nov 1989

Correlation Between The Activation Enthalpy And Kohlrausch Exponent For Ionic Conductivity In Oxide Glasses, Kia L. Ngai, Steve W. Martin

Materials Science and Engineering Publications

We have established for alkali ions in oxide glasses a strong correlation between the fractional (Kohlrausch) exponent β in the conductivity relaxation function, exp[-(t/τ*)β], and the activation energy E*a of τ* and σ when varying the composition of oxide glass formers and the alkali ions while holding the alkali-ion concentration constant. An even stronger correlation of the trends in β and the product βE*a is found. These correlations were expected conceptually by the coupling model for conductivity relaxation, and the latter was the motivation behind the present undertaking of the establishment of the correlation from ...


The Resistivity And Microstructure Of Heavily Drawn Cu‐Nb Alloys, J. D. Verhoeven, H. L. Downing, L. Scott Chumbley, E. D. Gibson Jan 1989

The Resistivity And Microstructure Of Heavily Drawn Cu‐Nb Alloys, J. D. Verhoeven, H. L. Downing, L. Scott Chumbley, E. D. Gibson

Materials Science and Engineering Publications

A combined resistivitytransmission electron microscopy(TEM) study has been done on heavily drawn Cu‐20 vol % Nb alloys (so‐called i n s i t u alloys). The results show that electron scattering at Cu‐Nb interfaces makes the major contribution to resistivity in heavily drawn wire. The dislocation contribution is small and constant at deformation strains greater than around 4, apparently as a result of dynamic recovery/recrystallization of the Cu matrix which occurs during room‐temperature drawing. Results of this study and other recent TEM dislocation studies indicate that the dislocation density in heavily drawn Cu‐20 vol ...