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High Electron Mobility In Free-Standing Gan Substrates, A. Saxler, David Look, Said Elhamri, J. Sizelove, D. Cull, William Mitchel, Michael Callahan, David Bliss, Lionel Bouthillette, Sheng-Qi Wang, C. Sung, Seong-Ju Park, K. Lee
High Electron Mobility In Free-Standing Gan Substrates, A. Saxler, David Look, Said Elhamri, J. Sizelove, D. Cull, William Mitchel, Michael Callahan, David Bliss, Lionel Bouthillette, Sheng-Qi Wang, C. Sung, Seong-Ju Park, K. Lee
Said Elhamri
High peak electron mobilities were observed in free-standing c-plane GaN substrates. Two layers, a low mobility degenerate layer and a high mobility bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: 1) magnetic field dependent Hall effect analysis and 2) a simple two carrier model with the assumption that one of the layers is degenerate. In addition, measurements were performed after etching away the degenerate layer. The mobility of the bulk layer is found to peak at nearly 8000 cm2/Vs at 60K using the magnetic field dependent Hall effect …
Deep Centers In Semi-Insulating Current Topics In Solid State Physics Fe-Doped Native Gan Substrates Grown By Hydride Vapour Phase Epitaxy, Z-Q. Fang, Bruce Claflin, David Look, Said Elhamri, H. Smith, William Mitchel, D. Hanser, E. Preble, K. Evans
Deep Centers In Semi-Insulating Current Topics In Solid State Physics Fe-Doped Native Gan Substrates Grown By Hydride Vapour Phase Epitaxy, Z-Q. Fang, Bruce Claflin, David Look, Said Elhamri, H. Smith, William Mitchel, D. Hanser, E. Preble, K. Evans
Said Elhamri
Electrical properties, Fe concentration, and deep centers in semi-insulating Fe-doped GaN substrates grown by hydride vapor phase epitaxy (HVPE) were characterized by temperature-dependent Hall-effect measurements, secondary ion mass spectroscopy, and thermally stimulated current (TSC) spectroscopy, Five adjacent samples from a low-[Fe] wafer displayed very high resistivity, dominated by a center at 0,94 eV. At least six traps were observed in the samples by TSC, with trap (0.56-0.60 eV) being dominant. A metastable trap A, at similar to 0.82 eV appeared after white-light illumination at 300 K-A sample from a high-[Fe] wafer displayed a lower resistivity, dominated by a center at …