Physics Commons^™

Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov

Scientific-technical journal

Cadmium and zinc, as transition metals, are deep-level impurities (DL) and have a significant effect on the electrical, photoelectric, recombination, and other properties of semiconductor crystals.This paper presents the results of experimental studies of the optical and electrical properties of silicon crystals containing impurity atoms of cadmium and zinc using DLTS and low-temperature photoluminescence (PL).

Optical Properties Of Ultrathin In(Ga)As/Gaas And In(Ga)N/Gan Quantum Wells, Yurii Maidaniuk

Graduate Theses and Dissertations

Recently, structures based on ultrathin quantum wells (QWs) began to play a critical role in modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting diodes. However, due to the lack of understanding of the formation mechanism of ultrathin QWs during the capping process, scientists and engineers cannot fully explore the potential of such structures. This study aims to investigate how structural parameters of ultrathin QWs affect their emission properties by conducting a systematic analysis of the optical properties of In(Ga)As/GaAs and In(Ga)N/GaN ultrathin QWs. Specifically, the analysis involved photoluminescence measurements combined with effective bandgap simulation, x-ray diffraction, and …

Near-Field And Far-Field Microscopic And Spectroscopic Characterizations Of Coupled Plasmonic, Excitonic And Polymeric Materials, Chih-Feng Wang

Optical Science and Engineering ETDs

The properties of localized surface plasmons (LSP) have been broadly utilized for chemical sensing, surface enhanced Raman spectroscopy, biomedical imaging and photothermal treatments. By exploiting well-established plasmonic effects, the spectroscopic investigation of intriguing quantum phenomena, such as excitonic interband and intersubband (ISB) transitions in semiconductor heterostructures, was examined and extended in both far- and near-field optical measurements. For far-field characterization, we used colloidal plasmonic Au nanorods (AuNRs) to increase the quantum efficiency of InGaAs/GaAs single quantum well. By analyzing the temperature-dependent photoluminescence enhancement as a function of GaAs capping layer thickness, we attributed the mechanism of the LSP enhancement to …

Tip-Enhanced Nano-Optical Imaging Of Superacid Treated Bilayer Mos2-Ws2 2d Lateral Heterostructures, Amala Dixit

USF Tampa Graduate Theses and Dissertations

Nanoscale optical characterization of two-dimensional (2D) materials and heterostructures is important for the design of novel optoelectronic flexible nano-devices. Nano-optical photoluminescence (PL) and Raman imaging of bilayer 2D materials has been a challenging problem due to weak signals. The exciton-dominated light emission of two-dimensional (2D) transition metal dichalcogenide (TMDC) materials is affected by the formation of defects and doping states. Previous studies have shown that chemical treatment modifies the defect and doping states of chemical vapor deposition (CVD)-grown monolayers of MoS₂ and WS₂, which provides a promising possibility for engineering the optoelectronic properties of these 2D TMDCs. …

Probing Quantized Excitations And Many-Body Correlations In Transition Metal Dichalcogenides With Optical Spectroscopy, Shao-Yu Chen

Doctoral Dissertations

Layered transition metal dichalcogenides (TMDCs) have attracted great interests in recent years due to their physical properties manifested in different polytypes: Hexagonal(H)-TMDC,which is semiconducting, exhibits strong Coulomb interaction and intriguing valleytronic properties; distorted octahedral(T’)-TMDC,which is semi-metallic, is predicted to exhibit rich nontrivial topological physics. In this dissertation,we employ the polarization-resolved micron-Raman/PL spectroscopy to investigate the optical properties of the atomic layer of several polytypes of TMDC. In the first part for polarization-resolved Raman spectroscopy, we study the lattice vibration of both H and T’-TMDC, providing a thorough understanding of the polymorphism of TMDCs. We demonstrate that Raman spectroscopy is a …

Plasmonic Enhancement Of Photoluminescence And Photobrightening In Cdse Quantum Dots, David Alan French

Graduate Theses and Dissertations

Quantum dots are gaining recognition not just in the physics and chemistry community, but in the public eye as well. Quantum dot technologies are now being used in sensors, detectors, and even television displays. By exciting quantum dots with light or electricity, they can be made to emit light, and by altering the quantum dot characteristics the wavelength can be finely tuned. The light emitted can be also be made more intense by an increase in the excitation energy. The excitation light can be increased via plasmonic enhancement, leading to increased luminescence. Aside from the relatively steady-state response, quantum dots …

Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu

Graduate Theses and Dissertations

Semiconductor quantum dots (QDs) confine carriers in three dimensions, resulting in atomic-like energy levels as well as size-dependent electrical and optical properties. Self-assembled III-V QD is one of the most studied semiconductor QDs thanks to their well-established fabrication techniques and versatile optical properties. This dissertation presents the photoluminescence (PL) study of the InAs/GaAs QDs with both above bandgap continuous-wave excitation (one-photon excitation) and below-bandgap pulse excitation (two-photon excitation). Samples of ensemble QDs, single QD (SQD), and QDs in a micro-cavity, all grown by molecular beam epitaxy, are used in this study. Morphology of these samples was examined using atomic force …

Light Soaking Phenomena In Organic-Inorganic Mixed Halide Perovskite Single Crystals, Hye Ryung Byun, Dae Young Park, Hye Min Oh, Gon Namkoong, Mun Seok Jeong

Electrical & Computer Engineering Faculty Publications

Recently, organic inorganic mixed halide perovskite (MAPbX₃; MA = CH₃NH₃^+, X = Cl^-, Br^-, or I^-) single crystals with low defect densities have been highlighted as candidate materials for high-efficiency photovoltaics and optoelectronics. Here we report the optical and structural investigations of mixed halide perovskite (MAPbBr_3-xI_x) single crystals. Mixed halide perovskite single crystals showed strong light soaking phenomena with light illumination conditions that were correlated to the trapping and detrapping events from defect sites. By systematic investigation with optical analysis, we found that the …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Control Of Light-Matter Interaction Via Dispersion Engineering, Harish Natarajan Swaha Krishnamoorthy

Dissertations, Theses, and Capstone Projects

This thesis describes the design, fabrication and characterization of certain nanostructures to engineer light-matter interaction. These materials have peculiar dispersion properties owing to their structural design, which is exploited to control spontaneous emission properties of emitters such as quantum dots and dye molecules. We will discuss two classes of materials based on the size of their unit cell compared to the wavelength of the electromagnetic radiation they interact with. The first class are hyperbolic metamaterials (HMM) composed of alternate layers of a metal and a dielectric of thicknesses much smaller than the wave- length. Using a HMM composed of silver …

Investigating The Influence Of Interface And Vacancy Defects On The Growth Of Silicon Quantum Dots In Sio2, John Phelan

Electronic Thesis and Dissertation Repository

The effects of interface and vacancy defects on silicon quantum dot (Si-QD) growth are investigated using measurements of Time Resolved Photoluminescence (TRPL), Photoluminescence (PL) Spectroscopy and Electron Paramagnetic Resonance (EPR). Thermally grown SiO₂ thin films (280nm) were irradiated with high energy (400keV – 1MeV) silicon ions in order to introduce defects into the Si-QD growth layer of SiO₂. A noticeable increase in PL emission intensity is seen with the highest energy pre-implanted sample over a single implant sample. TRPL results show increased radiative lifetimes for the lower energy (400keV) pre-implant while little or no difference is seen …

The Study Of Optoelectronics In Semiconductor And Metallic Nanoparticle Hybrid Systems, Daniel G. Schindel

Electronic Thesis and Dissertation Repository

This thesis examines optoelectronics of photonic crystals and photonic nanofibers, especially with quantum dots and metallic nanoparticles doped into them. The simulations produced focus on the quantum dots, which are presented in an ensemble of 3-level systems.

In order to consider a photonic nanofiber in isolation, a model was developed for the density of photonic states. We studied two profiles, a square cross-section and a circular cross-section. In addition, we consider two architectures, one where a photonic crystal surrounds a dielectric fiber, and one where the fiber is another photonic crystal. We found several photonic nanofibers with a single bound …

Electrical And Optical Characterization Of Si-Ge-Sn, Merle D. Hamilton

Theses and Dissertations

The electrical characterization of boron-doped p-Si_0.08Ge_0.90Sn_0.02/p-Ge(100) and p-Si_0.112Ge_0.86Sn_0.028/n-Si(100) with various epilayer thicknesses was measured using the Hall effect. The room temperature sheet carrier concentration ranged from 1.21 x 10¹³ – 1.32 x 10¹⁶ cm^-2. The room temperature mobilities were measured to be between 166 and 717 cm²/V·s, depending on sample composition. In the low temperature regime, the mobility was mainly affected by ionized impurity scattering. In the high temperature regime, the mobility was mainly affected by …

Effect Of Germanium Doping On Erbium Sensitization In The Erbium Doped Silicon Rich Silica Material System, Forrest Ruhge

Electronic Theses and Dissertations

The continued size reduction in electronic integrated circuits has lead to a demand for on-chip high-bandwidth and low loss communication channels. Optical interconnects are considered an essential addition to the silicon electronics platform. A major challenge in the field of integrated Si photonics is the development of cost effective silicon compatible light sources. This thesis investigates the sensitization of group IV doped silica films emitting at 1.535μm for applications as silicon compatible light sources. Thin erbium-doped silica films containing excess silicon and germanium were deposited using a multi-gun sputter system. The composition of the deposited materials was verified by Rutherford …

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …

The Optical Emission And Absorption Properties Of Silicon-Germanium Superlattice Structures Grown On Non-Conventional Silicon Substrate Orientation, Theodore L. Kreifels

Theses and Dissertations

Optical emission and absorption properties of Si_1-x Ge_x/Si superlattices grown on (100), (110), and (111) Si substrates were investigated to determine the optimal growth conditions for these structures to be used as infrared detectors. Fully-strained Si_1-x Ge_x/Si superlattices were grown by molecular beam epitaxy MBE and examined using low-temperature photoluminescence PL to identify no-phonon and phonon-replica interband transitions across the alloy bandgap. Phonon-resolved emission was most intense for undoped quantum wells grown at 710°C for all three silicon orientations. Room temperature absorption measurements were conducted on (100) and (110) Si_1-x Ge_x/Si …

The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee

Theses and Dissertations

This study on praseodymium Pr luminescence in Al_xGa_1-xAs was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 10¹² to 5 x 10¹³ sq cm into Al_xGa_1-xAs x0.0 to 0.50 wafers which were annealed using the rapid thermal annealing RTA method. Low temperature photoluminescence PL was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from all hosts include peaks near 1.3 and 1.6 µm which are assigned to the intra-4f transitions of 1G4 yielding 3H5 …