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Nanoscience and Nanotechnology

Wayne State University

Wayne State University Dissertations

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Optimization Of Transition-Metal Dichalcogenides Based Field- Effect- Transistors Via Contact Engineering, Meeghage Madusanka Perera Jan 2016

Optimization Of Transition-Metal Dichalcogenides Based Field- Effect- Transistors Via Contact Engineering, Meeghage Madusanka Perera

Wayne State University Dissertations

ABSTRACT

Optimization of Transition-Metal Dichalcogenides based Field- Effect-Transistors via contact engineering

by

Meeghage M Perera

September , 2016

Advisor : Dr. Zhixian Zhou

Major: Physics (Condensed mater physics/nano-electronics)

Degree: Doctor of Philosophy

Layered transition Metal Dichalcogenides (TMDs) have demonstrated a wide range of remarkable properties for applications in next generation nano-electronics. These systems have displayed many “graphene-like” properties including a relatively high carrier mobility, mechanical flexibility, chemical and thermal stability, and moreover offer the significant advantage of a substantial band gap. However, the fabrication of high performance field-effect transistors (FETs) of TMDs is challenging mainly due to the formation of a ...


Substrate Effects And Dielectric Integration In 2d Electronics, Bhim Prasad Chamlagain Jan 2016

Substrate Effects And Dielectric Integration In 2d Electronics, Bhim Prasad Chamlagain

Wayne State University Dissertations

The ultra-thin body of monolayer (and few-layer) two dimensional (2D) semiconducting materials such as transitional metal dichalconiges (TMDs), black phosphorous (BP) has demonstrated tremendous beneficial physical, transport, and optical properties for a wide range of applications. Because of their ultrathin bodies, the properties of 2D materials are highly sensitive to environmental effects. Particularly, the performance of 2D semiconductor electronic devices is strongly dependent on the substrate/dielectric properties, extrinsic impurities and absorbates. In this work, we systematically studied the transport properties of mechanically exfoliated few layer TMD field-effect transistors (FETs) consistently fabricated on various substrates including SiO2,Parylene –C, Al2O3 ...