Physics Commons^™

Remote Surface Optical Phonon Scattering In Ferroelectric Ba0.6Sr0.4Tio3 Gated Graphene, Hanying Chen, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert, Xia Hong

Xia Hong Publications

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23,000 cm² V⁻¹ s⁻¹ achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba_0.6Sr_0.4TiO₃, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for …

Indications Of Magnetic Coupling Effects In Spin Cross-Over Molecular Thin Films, Xin Zhang, Alpha T. N'Diaye, Xuanyuan Jiang, Xiaozhe Zhang, Yuewei Yin, Xuegang Chen, Xia Hong, Xiaoshan Xu, Peter Dowben

Xia Hong Publications

Room temperature isothermal reversible spin crossover switching of [Fe(H₂B(pz)₂)₂(bipy)] thin films is demonstrated. The magnetic oxide substrate locks the [Fe{H₂B(pz)₂}₂(bipy)] largely in a low spin state. With an X-ray fluence, excitation to a high spin state occurs, while relaxation back to low spin state is aided by alternating the substrate magnetization.

Includes supplementary materials.

Moving Towards The Magnetoelectric Graphene Transistor, Shi Cao, Zhiyong Xiao, Chun Pui Kwan, Kai Zhang, Jonathan P. Bird, Lu Wang, Wai-Ning Mei, Xia Hong, Peter A. Dowben

Xia Hong Publications

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr₂O₃ (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this …

Effect Of Strain On Ferroelectric Field Effect In Strongly Correlated Oxide Sm0.5nd0.5nio3, L. Zhang, X. G. Chen, H. J. Gardner, M. A. Koten, J. E. Shield, X. Hong

Xia Hong Publications

We report the effect of epitaxial strain on the magnitude and retention of the ferroelectric field effect in high quality PbZr_0.3Ti_0.7O₃ (PZT)/3.8-4.3 nm Sm_0.5Nd_0.5NiO₃ (SNNO) heterostructures grown on (001) LaAlO₃ (LAO) and SrTiO₃ (STO) substrates. For SNNO on LAO, which exhibits a first-order metal-insulator transition (MIT), switching the polarization of PZT induces a 10 K shift in the transition temperature T_MI, with a maximum resistance change between the on and off states of Δ𝑅/𝑅_on ~75%. In sharp contrast, only up to 5% resistance change has …

Nonlinear Transport In Nanoscale Phase Separated Colossal Magnetoresistive Oxide Thin Films, V. R. Singh, L. Zhang, A. K. Rajapitamahuni, N. Devires, X. Hong

Xia Hong Publications

We report a study of the I-V characteristics of 2.5–5.4 nm epitaxial La_1-xSr_xMnO₃ (x=0.33 and 0.5) and La_0.7Ca_0.3MnO₃ thin films. While La_0.67Sr_0.33MnO₃ films exhibit linear conduction over the entire temperature and magnetic field ranges investigated, we observe a strong correlation between the linearity of the I-V relation and the metal-insulator transition in highly phase separated La_0.5Sr_0.5MnO₃ and La_0.7Ca_0.3MnO₃ films. Linear I-V behavior has been observed in the high temperature …

Thermal Quench Effects On Ferroelectric Domain Walls, P. Paruch, A. B. Kolton, X. Hong, C. H. Ahn, T. Giamarchi

Xia Hong Publications

Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735 ◦C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal one-dimensional configuration and from a locally equilibrated pinned configuration with a crossover from a two- to one-dimensional regime. We find that the postquench spatial structure of the metastable states, qualitatively consistent with the existence of a growing dynamical length scale whose ultraslow evolution is primarily controlled …

Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S. -H. Cheng, C. Herding, J. Zhu

Xia Hong Publications

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by …

Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Xia Hong Publications

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O₃ (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50–110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at …

Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu

Xia Hong Publications

We demonstrate atomic layer deposition of high-quality dielectric HfO₂ films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO₂-covered graphene samples reaches 20 000 cm²/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO₂ substrate and the HfO₂ overlayer are isolated. At 300 K, surface phonon modes of the HfO₂ film centered at 54 meV limit the mobility to approximately 20 000 cm²/Vs.

Anisotropic Magnetoresistance And Planar Hall Effect In Epitaxial Films Of La0.7ca0.3mno3, N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein

Xia Hong Publications

We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La_0.7Ca_0.3MnO₃ (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated On Epitaxial Ferroelectric Gate Oxides, X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Xia Hong Publications

The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO₂ substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0:8)O₃ (PZT). In the electron-only regime of the FLG, μ reaches 7 X 10⁴ cm² / Vs at 300 K for n = 2.4 X 10¹²=cm², 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 10⁵ cm² / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding …

Quantum Scattering Time And Its Implications On Scattering Sources In Graphene, X. Hong, K. Zou, J. Zhu

Xia Hong Publications

We determine the quantum scattering time T_q in six graphene samples with mobility of 4 400<μ <17 000 cm² /V s over a wide range of carrier density (1.2<n<6X10¹²/cm2). T_q derived from Shubnikov–de Haas oscillation ranges ~25–74 fs, corresponding to a single-particle level broadening of 4.5–13 meV. The ratio of the transport to quantum scattering time T_t /T_q spans 1.5–5.1 in these samples, which can be quantitatively understood combining scattering from short-ranged centers and charged impurities located within 2 nm of the graphene sheet. Our results suggest that charges residing on the SiO …

Anisotropic Magnetoresistance In Colossal Magnetoresistive La1−Xsrxmno3 Thin Films, Jeng-Bang Yau, X. Hong, A. Posadas, C. H. Ahn, W. Gao, E. Altman, Y. Bason, L. Klein, M. Sidorov, Z. Krivokapic

Xia Hong Publications

We report on magnetic field and temperature-dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La_1−xSr_xMnO₃ (LSMO) thin films. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases the AMR, we find that in LSMO films the AMR dependence on magnetization displays nonmonotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials.

Planar Hall Effect In Epitaxial Thin Films Of Magnetite, Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, C. H. Ahn

Xia Hong Publications

We measured the planar Hall effect (PHE) of magnetite (Fe₃O₄) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a …

Effect Of Electric Field Doping On The Anisotropic Magnetoresistance In Doped Manganites, X. Hong, J. -B. Yau, J. D. Hoffman, C. H. Ahn

Xia Hong Publications

We have modulated the anisotropic magnetoresistance (AMR) in 3–4 nm manganite films using the ferroelectric field effect—a method that electrostatically varies the carrier density without affecting the lattice distortion. While significant changes have been induced in T_C and p, the AMR ratio remains the same when the magnetic state is not changed. This scaling behavior is in striking contrast to chemical doping results, where similar modulation of the carrier concentration (~0.1/Mn) changes the AMR ratio by ≥30%. The results reveal unambiguously the dominant role of chemical distortion in determining the AMR in manganites.

Ferromagnetism And Structure Of Epitaxial Cr-Doped Anatase Tio2 Thin Films, T. C. Kaspar, T. Droubay, V. Shutthanandan, S. M. Heald, C. M. Wang, D. E. Mccready, S. Thevuthasan, J. D. Bryan, D. R. Gamelin, A. J. Kellock, M. F. Toney, X. Hong, C. H. Ahn, S. A. Chambers

Xia Hong Publications

The materials and magnetic properties of Cr-doped anatase TiO₂ thin films deposited on LaAlO₃(001) and SrTiO₃(001) substrates by oxygen-plasma-assisted molecular beam epitaxy have been studied in detail to elucidate the origin of ferromagnetic ordering. Cr substitution for Ti in the anatase lattice, with no evidence of Cr interstitials, segregation, or secondary phases, was independently confirmed by transmission electron microscopy with energy dispersive x-ray spectroscopy, extended x-ray absorption fine structure, and Rutherford backscattering spectrometry in the channeling geometry. Epitaxial films deposited at ~0.1 Å/ s were found to have a highly defected crystalline structure, as quantified …

Planar Hall-Effect Magnetic Random Access Memory, Y. Bason, L. Klein, J. -B. Yau, X. Hong, J. Hoffman, C. H. Ahn

Xia Hong Publications

We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.

Examining The Screening Limit Of Field Effect Devices Via The Metal-Insulator Transition, X. Hong, A. Posadas, C. H. Ahn

Xia Hong Publications

The electronic screening length, the distance over which an electric field is attenuated in a material, imposes a lower physical bound on the lateral size scaling of semiconductor field effect devices. Alternatives will be needed to achieve devices whose characteristic dimensions approach a nanometer. In this work, we demonstrate the atomic-scale nature of screening at high electron densities, using the polarization field of a ferroelectric oxide, Pb(Zr,Ti)O₃, to electrostatically modulate the metallicity of ultrathin manganite La_1−xSr_xMnO₃ (LSMO) films near the metal-insulator transition. Within the screening length, the transport characteristics of LSMO vary sharply …

Giant Planar Hall Effect In Colossal Magnetoresistive La0.84sr0.16mno3 Thin Films, Y. Bason, L. Klein, J. -B. Yau, X. Hong, C. H. Ahn

Xia Hong Publications

The transverse resistivity in thin films of La_0.84Sr_0.16MnO₃ (LSMO) exhibits sharp field-symmetric jumps below T_C . We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices.

Ferroelectric-Field-Induced Tuning Of Magnetism In The Colossal Magnetoresistive Oxide La1Àxsrxmno3, X. Hong, A. Posadas, A. Lin, C. H. Ahn

Xia Hong Publications

A ferroelectric field effect approach is presented for modulating magnetism in the colossal magnetoresistive oxide La_1-xSr_xMnO₃ (LSMO). The ferromagnetic Curie temperature of ultrathin LSMO films was shifted by 35 K reversibly using the polarization field of the ferroelectric oxide Pb(Zr_xTi_1-x)O₃ in a field effect structure. This shift was also observed in magnetoresistance measurements, with the maximum magnetoresistance ratio at 6 T increasing from 64% to 77%. This model system approach does not introduce substitutional disorder or structural distortion, demonstrating that regulating the carrier concentration alone changes the magnetic phase transition …

Epitaxial Growth Of Pb(Zr0.2ti0.8)O3 On Si And Its Nanoscale Piezoelectric Properties, A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. Mckee, F. J. Walker, E. D. Specht

Xia Hong Publications

We have demonstrated a route to epitaxial Pb(Zr_0.2Ti_0.8)O₃ on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO₃ transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ~50 pm/V that is switchable down to sub-100-nm dimensions.