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Full-Text Articles in Physics

Chaotic Free-Space Laser Communication Over Turbulent Channel, N. F. Rulkov, Mikhail Vorontsov, L. Illing Dec 2002

Chaotic Free-Space Laser Communication Over Turbulent Channel, N. F. Rulkov, Mikhail Vorontsov, L. Illing

Electro-Optics and Photonics Faculty Publications

The dynamics of errors caused by atmospheric turbulence in a self-synchronizing chaos-based communication system that stably transmits information over a ∼5  km free-space laser link is studied experimentally. Binary information is transmitted using a chaotic sequence of short-term pulses as a carrier. The information signal slightly shifts the chaotic time position of each pulse depending on the information bit. We report the results of an experimental analysis of the atmospheric turbulence in the channel and the impact of turbulence on the bit-error-rate performance of this chaos-based communication system.


Examination Of The Relationship Between The Parameters Of Barkhausen Effect Model And Microstructure Of Magnetic Materials, Chester C.H. Lo, S. J. Lee, L. C. Kerdus, David C. Jiles May 2002

Examination Of The Relationship Between The Parameters Of Barkhausen Effect Model And Microstructure Of Magnetic Materials, Chester C.H. Lo, S. J. Lee, L. C. Kerdus, David C. Jiles

Center for Nondestructive Evaluation Publications

A relationship between the parameters of a hysteretic-stochastic process model of the Barkhausen effect (BE) and the microstructural features of a series of ferritic/pearlitic steel samples has been identified. The root-mean-square values and pulse height distributions of the experimental and modeled BE signals showed similar dependence on the pearlite content. The correlation length parameter ξ of the model, which represents the range of interaction of domain walls with pinning sites, was found to obey ξ=AVfDf+BVpDp where Vf(Vp)and Df(Dp) are the volume fraction and grain size of ferrite (pearlite).


Lorentz Transmission Electron Microscopy And Magnetic Force Microscopy Characterization Of Nife/Al-Oxide/Co Films, Andrew C. C. Yu, Chester C.H. Lo, Amanda K. Petford-Long, David C. Jiles, Terunobu Miyazaki Jan 2002

Lorentz Transmission Electron Microscopy And Magnetic Force Microscopy Characterization Of Nife/Al-Oxide/Co Films, Andrew C. C. Yu, Chester C.H. Lo, Amanda K. Petford-Long, David C. Jiles, Terunobu Miyazaki

Materials Science and Engineering Publications

Magnetization reversal process of NiFe/Al-oxide/Co junction films was observed directly using Lorentztransmission electron microscopy (LTEM) and magnetic force microscopy(MFM).In situmagnetizing experiments performed in both LTEM and MFM were facilitated by a pair of electromagnets, which were mounted on the sample stages. A two-stage magnetization reversal process for the junction film was clearly observed in LTEM with NiFe magnetization reversed first via domain wall motion followed by Co magnetization reversal via moment rotation and domain wall motion. Reversal mechanism and domain characteristics of the NiFe and Co layers showed very distinctive features. The magnetization curve of ...


Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee Jan 2002

Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee

Electrical and Computer Engineering Faculty Publications

This project, which began with the desire to render into English a rather long tale by Bimal Kar about five years ago, eventually grew into a considerably more extended compilation of Bengali short stories by 10 of the most well-known practitioners of that art since the heyday of Rabindranath Tagore. The collection is limited in many ways, not the least of which being that no woman writer has been included, and that it contains only a baker's dozen stories (if we count Bonophool's micro-stories collectively as one ) — a number pitifully small considering the vast and prolific field of ...


Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson Jan 2002

Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.


A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson Jan 2002

A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a ...


Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr. Jan 2002

Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr.

Electrical and Computer Engineering Faculty Publications

The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by ...


Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The electron pulse broadening and energy spread, caused by space charge effects, in a photoelectron gun are studied analytically using a fluid model. The model is applicable in both the photocathode-to-mesh region and the postanode electron drift region. It is found that space charge effects in the photocathode-to-mesh region are generally unimportant even for subpicosecond pulses. However, because of the long drift distance, electron pulse broadening due to space charge effects in the drift region is usually significant and could be much larger than the initial electron pulse duration for a subpicosecond electron pulse. Space charge effects can also lead ...


Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

An acceleration element is proposed for compressing the electron pulse duration in a femtosecond photoelectron gun. The element is a compact metal cavity with curved-shaped walls. An external voltage is applied to the cavity where a special electric field forms in such a way that the slow electrons in the electron pulse front are accelerated more than the fast electrons, and consequently the electron pulse duration will be compressed. The distribution of the electric field inside the acceleration cavity is analyzed for the geometry of the cavity. The electron dynamics in this acceleration cavity is also investigated numerically. Numerical results ...


Effect Of Ga Content On Defect States In Cuin1-XGaXSe2 Photovoltaic Devices, Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, Angus Rockett Jan 2002

Effect Of Ga Content On Defect States In Cuin1-XGaXSe2 Photovoltaic Devices, Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, Angus Rockett

Faculty Publications

Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.