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Full-Text Articles in Physics
Electrical Measurement Of Sram Cell Variation And Sensitivity To Singe-Event Upsets By Low-Energy Protons, James M. Cannon
Electrical Measurement Of Sram Cell Variation And Sensitivity To Singe-Event Upsets By Low-Energy Protons, James M. Cannon
Macalester Journal of Physics and Astronomy
With the rise of the transistor in the 1970s, electronics shifted from analog circuitry, where values are stored on a continuum, to digital, in which ones and zeros are the law of the land. Transistors, as a class circuit element, can be affected by radiation and cosmic rays which then cause temporary or permanent failures, depending on the specifics of the situation. On Earth, this poses little risk with all electronics shielded by the magnetosphere, however for space bound electronics, the risks from these extraterrestrial particles are not so negligible. The first step in designing a mission to be able …
Energetic Behavior Of Resistive Random-Access Memory Cells, Christopher M. Bisbee
Energetic Behavior Of Resistive Random-Access Memory Cells, Christopher M. Bisbee
Macalester Journal of Physics and Astronomy
In order to investigate the switching characteristics of Resistive Random Access Memory cells (ReRAM) in terms of their thermodynamic free energy properties, we need to build a number of models that replicate the system. This report contains the models used to investigate filament growth patterns based on different boundary conditions applied to the electrode-filament system. Using Comsol Multiphysics software, we determined that when a fixed voltage is applied to each electrode in the electrode-filament system, we should expect filament dissolution that resets our cells into the High Resistance State (HRS). If we instead fix a set amount of charge on …