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Two-Dimensional Low-Resistance Contacts For High Performance Wse2 And Mos2 Transistors, Hsun Jen Chuang
Two-Dimensional Low-Resistance Contacts For High Performance Wse2 And Mos2 Transistors, Hsun Jen Chuang
Wayne State University Dissertations
ABSTRACT
TWO-DIMENSIONAL LOW-RESISTANCE CONTACTS FOR HIGH PERFORMANCE WSe2 and MoS2, TRANSISTORS
by
Hsun-jen Chuang
May 2016
Advisor: Dr. Zhixian Zhou
Major: Physics
Degree: Doctor of Philosophy
Two-dimensional layered materials beyond graphene such as transition metal dichalcogenides (TMDs) have attracted a lot of interests due to their superior property in many aspects. In this work, I am focusing on two TMD materials: WSe2 and MoS2. The main objective this work is to develop novel approaches to fabricating low-resistance ohmic contacts to TMDs for low power, high performance electronic applications. First, we used graphene as electrical contacts for WSe2 field-effect transistor with …