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- Porous silicon (8)
- Etching (4)
- Silicon nanowires (4)
- Surface chemistry (4)
- Metal nanoparticles (3)
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- Stain etching (3)
- Electron transfer (2)
- Hydrosilylation (2)
- Laser ablation (2)
- Metal assisted etching (2)
- Metal-assisted etching (2)
- Nanostructures (2)
- Passivation (2)
- Photoluminescence (2)
- Reaction dynamics (2)
- Silicon (2)
- 3D printing (1)
- Anodic dissolution (1)
- Anodization (1)
- Applied surface science (1)
- Arginine (1)
- Band structure (1)
- Bubble (1)
- Charge transfer (1)
- Chemisorption (1)
- Conductive polymer (1)
- Corrosion (1)
- Cysteine oxidation (1)
- Density of states (1)
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Articles 1 - 30 of 32
Full-Text Articles in Materials Chemistry
Silicon In Renewable Power Generation And Storage: Decarbonizing The Grid And Automobile Transport, Kurt W. Kolasinski
Silicon In Renewable Power Generation And Storage: Decarbonizing The Grid And Automobile Transport, Kurt W. Kolasinski
Sustainability Research & Practice Seminar Presentations
Professor Kurt Kolasinski, Chemistry - Silicon in renewable power generation and storage: Decarbonizing the grid and automobile transport.
Silica Particles Convert Thiol-Containing Molecules To Disulfides, Yangjie Li, Kurt W. Kolasinski, Richard N. Zare
Silica Particles Convert Thiol-Containing Molecules To Disulfides, Yangjie Li, Kurt W. Kolasinski, Richard N. Zare
Chemistry Faculty Publications
Synthetic amorphous silica is a common food additive and a popular cosmetic ingredient. Mesoporous silica particles are also widely studied for their potential use in drug delivery and imaging applications because of their unique properties, such as tunable pore sizes, large surfaces areas, and assumed biocompatibility. Such a nanomaterial, when consisting of pure silicon dioxide, is generally considered to be chemically inert, but in this study, we showed that oxidation yields for different compounds were facilitated by simply incubating aqueous solutions with pure silica particles. Three thiol-containing molecules, L-cysteine, glutathione, and D-penicillamine, were studied separately, and it was found that …
Direct Ink 3d Printing Of Porous Carbon Monoliths For Gas Separations, Marisa L. Comroe, Kurt W. Kolasinski, Dipendu Saha
Direct Ink 3d Printing Of Porous Carbon Monoliths For Gas Separations, Marisa L. Comroe, Kurt W. Kolasinski, Dipendu Saha
Chemistry Faculty Publications
Additive manufacturing or 3D printing is the advanced method of manufacturing monolithic adsorbent materials. Unlike beads or pellets, 3D monolithic adsorbents possess the advantages of widespread structural varieties, low heat and mass transfer resistance, and low channeling of fluids. Despite a large volume of research on 3D printing of adsorbents having been reported, such studies on porous carbons are highly limited. In this work, we have reported direct ink 3D printing of porous carbon; the ink consisted of commercial activated carbon, a gel of poly(4-vinylphenol) and Pluronic F127 as plasticizer, and bentonite as the binder. The 3D printing was performed …
Characterization Of Mechanochemical Modification Of Porous Silicon With Arginine, Jacklyn A. Dipietro, Kurt W. Kolasinski
Characterization Of Mechanochemical Modification Of Porous Silicon With Arginine, Jacklyn A. Dipietro, Kurt W. Kolasinski
Chemistry Faculty Publications
Mechanochemistry initiated the reaction of hydrogen-terminated porous silicon (H/por-Si) powder with arginine. Samples were analyzed using Fourier-transform infrared spectroscopy (FTIR), dynamic light scattering (DLS), zeta potential, scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy. Arginine, which was physisorbed onto the surface of por-Si, blue-shifted the peak PL intensity from similar to 630 nm for the H/por-Si to similar to 565 nm for arginine-coated por-Si. Grinding for 4 h reduced >80% of the initially 2-45 mu m particles to <500 nm, but was observed to quench the PL. With appropriate rinsing and centrifugation, particles in the 100 nm range were isolated. Rinsing ground powder with water was required to remove the unreacted arginine. Without rinsing, excess arginine induced the aggregation of passivated particles. However, water reacted with the freshly ground por-Si powder producing H-2. A zeta potential of +42 mV was measured for arginine-terminated por-Si particles dispersed in deionized water. This positive value was consistent with termination such that NH2 groups extended away from the surface. Furthermore, this result was confirmed by FTIR spectra, which suggested that arginine was bound to silicon through the formation of a covalent Si-O bond.
A Tribute To Professor Gaetano Granozzi And His Contributions To Surface Science On The Occasion Of His 70th Birthday, Kurt W. Kolasinski
A Tribute To Professor Gaetano Granozzi And His Contributions To Surface Science On The Occasion Of His 70th Birthday, Kurt W. Kolasinski
Chemistry Faculty Publications
On the occasion of his 70th birthday, we celebrate the career of our Editor-in-Chief, Professor Gaetano Granozzi. Prof. Granozzi’s work is marked by his dedication to the fundamental understanding of technologically relevant systems through the lens of surface science.
Fabrication Of Electrospun Nanofiber Composite Of G-C3n4 And Au Nanoparticles As Plasmonic Photocatalyst, Dipendu Saha, Pasquale Gismondi, Kurt W. Kolasinski, Samantha L. Shumlas, Sylvie Rangan, Babak Eslami, Amy Mcconnell, Taevaughn Bui, Kayla Cunfer
Fabrication Of Electrospun Nanofiber Composite Of G-C3n4 And Au Nanoparticles As Plasmonic Photocatalyst, Dipendu Saha, Pasquale Gismondi, Kurt W. Kolasinski, Samantha L. Shumlas, Sylvie Rangan, Babak Eslami, Amy Mcconnell, Taevaughn Bui, Kayla Cunfer
Chemistry Faculty Publications
In this research, we have fabricated a composite nanofiber mat of plasmonic photocatalyst consisting of g-C3N4, gold nanoparticles (AuNPs) and random nanofibers of polyvinylidene fluoride (PVDF) by electrospinning. The structure and chemical properties of the nanofiber mat were investigated in detail by ESEM, TEM, AFM, XPS, FTIR, XRD, TGA, PL spectroscopy and UV-Vis reflectance spectra. Imaging of the composite map confirmed that the fiber diameter was in the range of 100-400 nm with the g-C3N4 size in the range of 2-8 μm. Backscattered (Zcontrast) electron imaging in ESEM revealed that the AuNP particle size is in the range of 60-160 …
Metal-Assisted Catalytic Etching (Mace) For Nanofabrication Of Semiconductor Powders, Kurt W. Kolasinski
Metal-Assisted Catalytic Etching (Mace) For Nanofabrication Of Semiconductor Powders, Kurt W. Kolasinski
Chemistry Faculty Publications
Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted …
Soft Ion Sputtering Of Pani Studied By Xps, Afm, Tof-Sims, And Sts, Christopher M. Goodwin, Zachary E. Voras, Xiao Tong, Thomas P. Beebe, Jr.
Soft Ion Sputtering Of Pani Studied By Xps, Afm, Tof-Sims, And Sts, Christopher M. Goodwin, Zachary E. Voras, Xiao Tong, Thomas P. Beebe, Jr.
Chemistry Faculty Publications
Herein is a study of the soft sputtering method, gas cluster ion sputtering (GCIS), and its effects on the atomic, morphologic, and band structure properties of polyaniline (PAni) as studied with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry, atomic force microscopy, and scanning tunneling spectroscopy (STS). The GCIS source used was a 1000 argon atom cluster with 4 keV energy, which resulted in a sputter yield of 3.4 ± 0.2 × 10−3 nm3 per argon atom. Soft ion sputtering reduced the sample by explicitly removing the oxidized contaminants as determined by surface sensitive techniques: XPS and Time-of-flight secondary …
Low-Load Metal-Assisted Catalytic Etching Produces Scalable Porosity In Si Powders, Konstantin Tamarov, Riku Kiviluoto, Josph D. Swanson, Bret A. Unger, Alexis T. Ernst, Mark Aindow, Joakim Riikonen, Vesa-Pekka Lehto, Kurt W. Kolasinski
Low-Load Metal-Assisted Catalytic Etching Produces Scalable Porosity In Si Powders, Konstantin Tamarov, Riku Kiviluoto, Josph D. Swanson, Bret A. Unger, Alexis T. Ernst, Mark Aindow, Joakim Riikonen, Vesa-Pekka Lehto, Kurt W. Kolasinski
Chemistry Faculty Publications
The recently discovered low-load metal-assisted catalytic etching (LL-MACE) creates nanostructured Si with controllable and variable characteristics that distinguish this technique from the conventional high-load variant. LL-MACE employs 150 times less metal catalyst and produces porous Si instead of Si nanowires. In this work, we demonstrate that some of the features of LL-MACE cannot be explained by the present understanding of MACE. With mechanistic insight derived from extensive experimentation, it is demonstrated that (1) the method allows the use of not only Ag, Pd, Pt, and Au as metal catalysts but also Cu and (2) judicious combinations of process parameters such …
Response Of Photoluminescence Of H-Terminated And Hydrosilylated Porous Si Powders To Rinsing And Temperature, Kurt W. Kolasinski, Joseph D. Swanson, Benjamin Roe, Teresa Lee
Response Of Photoluminescence Of H-Terminated And Hydrosilylated Porous Si Powders To Rinsing And Temperature, Kurt W. Kolasinski, Joseph D. Swanson, Benjamin Roe, Teresa Lee
Chemistry Faculty Publications
The photoluminescence (PL) response of porous Si has potential applications in a number of sensor and bioimaging techniques. However, many questions still remain regarding how to stabilize and enhance the PL signal, as well as how PL responds to environmental factors. Regenerative electroless etching (ReEtching) was used to produce photoluminescent porous Si directly from Si powder. As etched, the material was H-terminated. The intensity and peak wavelength were greatly aected by the rinsing protocol employed. The highest intensity and bluest PL were obtained when dilute HCl(aq) rinsing was followed by pentane wetting and vacuum oven drying. Roughly half of the …
Regenerative Electroless Etching (U.S. Patent), Kurt W. Kolasinski, Jarno Salonen, Ermei Makila
Regenerative Electroless Etching (U.S. Patent), Kurt W. Kolasinski, Jarno Salonen, Ermei Makila
Chemistry Faculty Publications
A regenerative electroless etching process produces nanostructured semiconductors in which an oxidant (Ox 1 ) is used as a catalytic agent to facilitate reaction between a semiconductor and a second oxidant (Ox2) that would be unreactive (or slowly reactive compared to Ox 1 ) in the primary reaction. Ox2 is used to regenerate Ox1 , which can initiate etching by injecting holes into the semiconductor valence band. The extent of reaction is controlled by the amount of Ox2 added; the reaction rate, by the injection rate of Ox2 . This general strategy is demonstrated specifically to produce highly luminescent nanocrystalline …
Hierarchical Nanostructuring Of Porous Silicon With Electrochemical And Regenerative Electroless Etching, Ermei Mäkilä, Anne-Mari Anton Willmore, Haibo Yu, Marianna Irri, Mark Aindow, Tambet Teesalu, Leigh Trevor Canham, Kurt W. Kolasinski, Jarno Salonen
Hierarchical Nanostructuring Of Porous Silicon With Electrochemical And Regenerative Electroless Etching, Ermei Mäkilä, Anne-Mari Anton Willmore, Haibo Yu, Marianna Irri, Mark Aindow, Tambet Teesalu, Leigh Trevor Canham, Kurt W. Kolasinski, Jarno Salonen
Chemistry Faculty Publications
Hierarchically nanostructured silicon was produced by regenerative electroless etching (ReEtching) of Si powder made from pulverized anodized porous silicon. This material is characterized by ∼15 nm mesopores, into the walls of which tortuous 2–4 nm pores have been introduced. The walls are sufficiently narrow that they support quantum-confined crystallites that are photoluminescent. With suitable parameters, the ReEtching process also provides control over the emission color of the photoluminescence. Ball milling and hydrosilylation of this powder with undecylenic acid produces nanoparticles with hydrodynamic diameter of ∼220 nm that exhibit robust and bright luminescence that can be excited with either one ultraviolet/visible …
Crystallographically Determined Etching And Its Relevance To The Metal-Assisted Catalytic Etching (Mace) Of Silicon Powders, Kurt W. Kolasinski, Bret A. Unger, Alexis T. Ernst, Mark Aindow
Crystallographically Determined Etching And Its Relevance To The Metal-Assisted Catalytic Etching (Mace) Of Silicon Powders, Kurt W. Kolasinski, Bret A. Unger, Alexis T. Ernst, Mark Aindow
Chemistry Faculty Publications
Metal-assisted catalytic etching (MACE) using Ag nanoparticles as catalysts and H2O2 as oxidant has been performed on single-crystal Si wafers, single-crystal electronics grade Si powders, and polycrystalline metallurgical grade Si powders. The temperature dependence of the etch kinetics has been measured over the range 5–37◦C. Etching is found to proceed preferentially in a h001i direction with an activation energy of ∼0.4 eV on substrates with (001), (110), and (111) orientations. A quantitative model to explain the preference for etching in the h001i direction is developed and found to be consistent with the measured activation energies. Etching of metallurgical grade powders …
Nano To Global: Small Structures And Their Impact On Energy Markets, Kurt W. Kolasinski
Nano To Global: Small Structures And Their Impact On Energy Markets, Kurt W. Kolasinski
Sustainability Research & Practice Seminar Presentations
No abstract provided.
Hierarchical Porous Silicon And Porous Silicon Nanowires Produced With Regenerative Electroless Etching (Reetching) And Metal Assisted Catalytic Etching (Mace), Kurt W. Kolasinski, Bret A. Unger, Haibo Yu, Alexis T. Ernst, Mark Aindow, Ermei Mäkilä, Jarno Salonen
Hierarchical Porous Silicon And Porous Silicon Nanowires Produced With Regenerative Electroless Etching (Reetching) And Metal Assisted Catalytic Etching (Mace), Kurt W. Kolasinski, Bret A. Unger, Haibo Yu, Alexis T. Ernst, Mark Aindow, Ermei Mäkilä, Jarno Salonen
Chemistry Faculty Publications
ReEtching produces nanostructured silicon when a catalytic agent, e.g. dissolved V2O5, is used to facilitate etching between Si and H2O2. H2O2 regenerates dissolved V in a 5+ oxidation state, which initiates etching by injecting holes into the Si valence band. Independent control over the extent of reaction (controlled by the amount of H2O2 added) and the rate of reaction (controlled by the rate at which H2O2 is pumped into the etchant solution) allows us to porosify Si substrates of arbitrary size, shape and doping, including wafers, single-crystal powders, polycrystalline powders, metallurgical grade powder, Si nanowires, Si pillars and Si powders …
Crystallographically Defined Silicon Macropore Membranes, Shannon C. Knight, Bret A. Unger, Kurt W. Kolasinski
Crystallographically Defined Silicon Macropore Membranes, Shannon C. Knight, Bret A. Unger, Kurt W. Kolasinski
Chemistry Faculty Publications
Laser ablation with nanosecond-pulsed Nd:YAG laser irradiation combined with anisotropic alkaline etching of Si wafers creates 4–20 µm macropores that extend all the way through the wafer. The walls of these macropores are crystallographically defined by the interaction of the anisotropy of the etchant with the orientation of the single-crystal silicon substrate: rectangular/octagonal on Si(001), parallelepiped on Si(110), triangular/hexagonal on Si(111). Laser ablation can create pillars with peak-tovalley heights of over 100 µm. However, with nanosecondpulsed irradiation at 532 nm, the majority of this height is created by growth above the original plane of the substrate whereas for 355 nm …
Silicon Surface Photochemistry, Kurt W. Kolasinski
Silicon Surface Photochemistry, Kurt W. Kolasinski
Chemistry Faculty Publications
General concepts of photochemistry on metal and semiconductor surfaces are elucidated. These concepts are then applied more specifically to describe photochemical transformation of molecules on and with silicon surfaces. The mechanisms by which light can induce chemical reactions following electronic excitation are described. Processes reviewed include photodissociation of adsorbed molecules, photo-induced attachment of organic molecules and photo-induced corrosion.
Plume And Nanoparticle Formation During Laser Ablation, Kurt W. Kolasinski, Mool C. Gupta, Leonid V. Zhigilei
Plume And Nanoparticle Formation During Laser Ablation, Kurt W. Kolasinski, Mool C. Gupta, Leonid V. Zhigilei
Chemistry Faculty Publications
The processes that lead to material ejection when a solid sample is irradiated near and above the pulsed laser ablation threshold are discussed. Emphasis is placed on the thermal and mechanical mechanisms that occur during pulsed laser irradiation of metals and semiconductors. Distinctions are drawn between ultrafast-pulsed irradiation, which occurs under stress confinement, and shortpulsed irradiation, in which stress is released during the laser pulse. Similarly, the distinctions between the spallation and phase explosion regimes are discussed. Spallation is only possible when the time of the laser heating is shorter than the time needed for mechanical equilibration of the heated …
Controlled Microfabrication Of High-Aspect-Ratio Structures In Silicon At The Highest Etching Rates: The Role Of H2o2 In The Anodic Dissolution Of Silicon In Acidic Electrolytes, Chiara Cozzi, Giovanni Polito, Kurt W. Kolasinski, Giuseppe Barillaro
Controlled Microfabrication Of High-Aspect-Ratio Structures In Silicon At The Highest Etching Rates: The Role Of H2o2 In The Anodic Dissolution Of Silicon In Acidic Electrolytes, Chiara Cozzi, Giovanni Polito, Kurt W. Kolasinski, Giuseppe Barillaro
Chemistry Faculty Publications
In this work the authors report on the controlled electrochemical etching of high-aspect-ratio (from 5 to 100) structures in silicon at the highest etching rates (from 3 to 10 µm min−1) at room temperature. This allows silicon microfabrication entering a previously unattainable region where etching of high-aspect-ratio structures (beyond 10) at high etching rate (over 3 µm min−1) was prohibited for both commercial and research technologies. Addition of an oxidant, namely H2O2, to a standard aqueous hydrofluoric (HF) acid electrolyte is used to dramatically change the stoichiometry of the silicon dissolution process under anodic biasing without loss of etching control …
Regenerative Electroless Etching Of Silicon, Kurt W. Kolasinski, Nathan J. Gimbar, Haibo Yu, Mark Aindow, Ermei Mäkilä, Jarno Salonen
Regenerative Electroless Etching Of Silicon, Kurt W. Kolasinski, Nathan J. Gimbar, Haibo Yu, Mark Aindow, Ermei Mäkilä, Jarno Salonen
Chemistry Faculty Publications
Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1, which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2. This general strategy is demonstrated specifically …
Charge Transfer At The Liquid/Solid Interface To Affect Nanostructure Formation, Kurt W. Kolasinski
Charge Transfer At The Liquid/Solid Interface To Affect Nanostructure Formation, Kurt W. Kolasinski
Chemistry Faculty Publications
No abstract provided.
Subtractive Methods To Form Pyrite And Sulfide Nanostructures Of Fe, Co, Ni, Cu And Zn, Kurt W. Kolasinski
Subtractive Methods To Form Pyrite And Sulfide Nanostructures Of Fe, Co, Ni, Cu And Zn, Kurt W. Kolasinski
Chemistry Faculty Publications
The low Z metals Fe, Co, Ni, Cu and Zn are Earth abundant, i.e. inexpensive, and their sulfides are of low toxicity. This makes them appealing candidates for materials applications requiring semiconductors or, in the case of CoS2, a metal since they can potentially be produced in large quantities and low cost. Though of great potential little work has explored how subtractive methods can be used to form nanostructured and/or porous structures in, e.g. FeS2, CoS2, NiS, Cu2S and ZnS.
Electron Transfer During Metal-Assisted And Stain Etching Of Silicon, Kurt W. Kolasinski
Electron Transfer During Metal-Assisted And Stain Etching Of Silicon, Kurt W. Kolasinski
Chemistry Faculty Publications
The etching of silicon in fluoride solutions is limited by the kinetics of charge transfer not thermodynamics. This characteristic is what gives fluoride etching its great versatility in making different types of nanostructures as the result of self-limiting chemistry. This review approaches the kinetics of electron transfer from silicon and metal coated silicon to a solution phase species from a fundamental point of view in order to establish a better understanding of the mechanisms of nanostructure formation during metal assisted and stain etching of silicon. Band bending calculations demonstrate that diffusion of holes away from low work function metals such …
The Stoichiometry Of Metal Assisted Etching (Mae) Of Si In V2o5 + Hf And Hooh + Hf Solutions, Kurt W. Kolasinski, William B. Barclay, Yu Sun, Mark Aindow
The Stoichiometry Of Metal Assisted Etching (Mae) Of Si In V2o5 + Hf And Hooh + Hf Solutions, Kurt W. Kolasinski, William B. Barclay, Yu Sun, Mark Aindow
Chemistry Faculty Publications
No abstract provided.
Porous Layers Composed Of Oxide Crystallites Formed By The Combination Of Laser Ablation And Anodization Of Metal, Abbie S. Ganas, Dmitry A. Znamensky, Nahúm Méndez Alba, José Luis Hernández-Pozos, Kurt W. Kolasinski
Porous Layers Composed Of Oxide Crystallites Formed By The Combination Of Laser Ablation And Anodization Of Metal, Abbie S. Ganas, Dmitry A. Znamensky, Nahúm Méndez Alba, José Luis Hernández-Pozos, Kurt W. Kolasinski
Chemistry Faculty Publications
No abstract provided.
The Mechanism Of Galvanic/Metal-Assisted Etching Of Silicon, Kurt W. Kolasinski
The Mechanism Of Galvanic/Metal-Assisted Etching Of Silicon, Kurt W. Kolasinski
Chemistry Faculty Publications
No abstract provided.
Bubbles: A Review Of Their Relationship To The Formation Of Thin Films And Porous Materials, Kurt W. Kolasinski
Bubbles: A Review Of Their Relationship To The Formation Of Thin Films And Porous Materials, Kurt W. Kolasinski
Chemistry Faculty Publications
No abstract provided.
The Mechanism Of Photo-Hydrosilylation On Silicon And Porous Silicon Surfaces, Kurt W. Kolasinski
The Mechanism Of Photo-Hydrosilylation On Silicon And Porous Silicon Surfaces, Kurt W. Kolasinski
Chemistry Faculty Publications
No abstract provided.
Dynamics Of Porous Silicon Formation By Etching In Hf + V2o5 Solutions, Kurt W. Kolasinski, Justin B. Hartline, Bryan T. Kelly, Julia Yadlovskiy
Dynamics Of Porous Silicon Formation By Etching In Hf + V2o5 Solutions, Kurt W. Kolasinski, Justin B. Hartline, Bryan T. Kelly, Julia Yadlovskiy
Chemistry Faculty Publications
No abstract provided.
Charge Transfer And Nanostructure Formation During Electroless Etching Of Silicon, Kurt W. Kolasinski
Charge Transfer And Nanostructure Formation During Electroless Etching Of Silicon, Kurt W. Kolasinski
Chemistry Faculty Publications
No abstract provided.