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Full-Text Articles in Physical Sciences and Mathematics

Optical Stability Of 1,1′-Binaphthyl Derivatives, Nikolay V. Tkachenko, Steve Scheiner Mar 2019

Optical Stability Of 1,1′-Binaphthyl Derivatives, Nikolay V. Tkachenko, Steve Scheiner

Chemistry and Biochemistry Faculty Publications

The racemization process of various 1,1′-binaphthyl derivatives is studied by quantum calculations. The preferred racemization pathway passes through a transition state belonging to the Ci symmetry group. The energy barrier for this process is independent of solvation, the electron-withdrawing/releasing power of substituents, or their ability to engage in H-bonds within the molecule. The primary factor is instead the substituent size. The barrier is thus reduced when the −OH groups of 1,1′-bi-2-naphthol are replaced by H. There is a drop in the barrier also when the substituents are moved from the 2,2′ positions to ...


Infinite-Randomness Fixed Point Of The Quantum Superconductor-Metal Transitions In Amorphous Thin Films, Nicholas A. Lewellyn, Ilana M. Percher, J. J. Nelson, Javier Garcia-Barriocanal, Irina Volotsenko, Aviad Frydman, Thomas Vojta, Allen M. Goldman Feb 2019

Infinite-Randomness Fixed Point Of The Quantum Superconductor-Metal Transitions In Amorphous Thin Films, Nicholas A. Lewellyn, Ilana M. Percher, J. J. Nelson, Javier Garcia-Barriocanal, Irina Volotsenko, Aviad Frydman, Thomas Vojta, Allen M. Goldman

Physics Faculty Research & Creative Works

The magnetic-field-tuned quantum superconductor-insulator transitions of disordered amorphous indium oxide films are a paradigm in the study of quantum phase transitions and exhibit power-law scaling behavior. For superconducting indium oxide films with low disorder, such as the ones reported on here, the high-field state appears to be a quantum-corrected metal. Resistance data across the superconductor-metal transition in these films are shown here to obey an activated scaling form appropriate to a quantum phase transition controlled by an infinite-randomness fixed point in the universality class of the random transverse-field Ising model. Collapse of the field-dependent resistance vs temperature data is obtained ...