Physical Sciences and Mathematics Commons^™

Analysis Of Adsorbed Contaminants Of Caf2 Surfaces By Infrared Laser Induced Desorption, Jinmei Fu, Yamini Surapaneni, Susan D. Allen

Susan D. Allen

157 nm photolithography technologies are currently under development and have been accepted as the leading candidate for fabrication of the next generation semiconductor devices after 193 nm. At this and shorter wavelengths, molecular contamination of surfaces becomes a serious problem as almost all molecules absorb at 157 nm and below. The light transmitted by a photolithographic tool can be significantly decreased by the presence of a few monolayers adsorbed on its many optical surfaces. We have developed a laser induced desorption, electron impact ionization, time-of-flight mass spectrometer (LID TOFMS) to study contaminants on 157nm and other ultraviolet optics, e.g., polished …