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Physical Sciences and Mathematics Commons™
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Full-Text Articles in Physical Sciences and Mathematics
Built-In Electric Field Assisted Spin Injection In Cr And Mn Δ-Layer Doped Aln/Gan(0001) Heterostructures From First Principles, X. Y. Cui, Julia E. Medvedeva, B. Delley, C. Stampfl, Arthur J. Freeman
Built-In Electric Field Assisted Spin Injection In Cr And Mn Δ-Layer Doped Aln/Gan(0001) Heterostructures From First Principles, X. Y. Cui, Julia E. Medvedeva, B. Delley, C. Stampfl, Arthur J. Freeman
Physics Faculty Research & Creative Works
Highly spin-polarized diluted ferromagnetic semiconductors are expected to be widely used as ideal spin injectors. Here, extensive first-principles density-functional theory calculations have been performed to investigate the feasibility of using Cr- and Mn-doped wurtzite polar AlN/GaN(0001) heterostructures, with the aim to realize the appealing half-metallic character and, hence, efficient electrical spin injection. To overcome the formation of detrimental embedded clusters, we propose digital delta-layer doping perpendicular to the growth direction so as to realize enhanced performance at room temperature. The formation energy, electronic and magnetic properties, and the degree of spin polarization for both neutral and charged valence states for …
The Evolution Of Ga And As Core Levels In The Formation Of Fe/Gaas (001): A High Resolution Soft X-Ray Photoelectron Spectroscopic Study, Tiehan H. Shen, Denis Greig, Mark Hopkinson, George Daniel Waddill, Jamie D. W. Thompson, James R. Neal, Simon A. Morton, James G. Tobin, Jim A. D. Matthew
The Evolution Of Ga And As Core Levels In The Formation Of Fe/Gaas (001): A High Resolution Soft X-Ray Photoelectron Spectroscopic Study, Tiehan H. Shen, Denis Greig, Mark Hopkinson, George Daniel Waddill, Jamie D. W. Thompson, James R. Neal, Simon A. Morton, James G. Tobin, Jim A. D. Matthew
Physics Faculty Research & Creative Works
A high resolution soft x-ray photoelectron spectroscopic study of Ga and as 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer—a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and as during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and as remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on …