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Full-Text Articles in Physical Sciences and Mathematics
Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam
Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam
Electronic Thesis and Dissertation Repository
The advancement of semiconductor materials has played a crucial role in driving positive technological breakthroughs that impact humanity in numerous ways. The presence of defects significantly alters the physical properties of semiconductors, making their analysis essential in the fabrication of semiconductor devices. I presented a new method to quantify surface and near-surface defects in single crystal semiconductors. Epitaxially-grown silicon was measured by low energy electron diffraction (LEED) to obtain the surface Debye temperature (θD). The results showed the surface θD of bulk Si (001), 1.0 μm, and 0.6 μm Si on sapphire of 333 K, 299 K, …
Functional Nanoparticles: Tin Monoxide And Molybdenum Disulfide Quantum Dots On Graphene Nanosheets, Denys Vidish
Functional Nanoparticles: Tin Monoxide And Molybdenum Disulfide Quantum Dots On Graphene Nanosheets, Denys Vidish
Electronic Thesis and Dissertation Repository
Light harvesting can be referred to the use of an ensemble of different nanoparticles, or quantum dots, or other absorbers to optimize the ability to capture a given spectrum of electromagnetic radiation (for example the solar spectrum under specific atmospheric conditions) in a light-absorbing system. To this end, different nanoparticles play complementary functions within the system and absorb or scatter light at different wavelength intervals. Light harvesting finds applications in fields as diverse as solar cells, photosynthesis and photocatalysis. Graphene supporting a set of different semiconducting nanoparticles has often been proposed as light harvesters. To further this concept, my thesis …
Fundamental Transport Properties In Silicon Quantum Structures, Nazban M. Darukhanawalla
Fundamental Transport Properties In Silicon Quantum Structures, Nazban M. Darukhanawalla
Electronic Thesis and Dissertation Repository
In the field of silicon photonics, there is an effort to bridge the gap between electrical and optical signals on a single platform, creating a need for Si-based light sources. In this project, Si quantum structures – Si quantum wells and quantum dots in SiO2 were fabricated via solid state precipitation methods. Their properties were studied using X-ray photoelectron spectroscopy, photoluminescence and I-V measurements. Rutherford backscattering spectroscopy was used for depth analysis in monitoring the Si distribution. Different electrical transport mechanisms were explored to understand how an ensemble of silicon QD’s or a silicon quantum well behaves in an SiO2 …