Operations Research, Systems Engineering and Industrial Engineering Commons^™

Reliability Analysis Of Nanocrystal Embedded High-K Nonvolatile Memories, Chia-Han Yang

Doctoral Dissertations

The evolution of the MOSFET technology has been driven by the aggressive shrinkage of the device size to improve the device performance and to increase the circuit density. Currently, many research demonstrated that the continuous polycrystalline silicon film in the floating-gate dielectric could be replaced with nanocrystal (nc) embedded high-k thin film to minimize the charge loss due to the defective thin tunnel dielectric layer.

This research deals with both the statistical aspect of reliability and electrical aspect of reliability characterization as well. In this study, the Zr-doped HfO₂ (ZrHfO) high-k MOS capacitors, which separately contain the nanocrystalline zinc …