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Full-Text Articles in Nuclear Engineering

Shock Wave Interaction With L-Shaped Structures, Richard C. Miller Dec 1993

Shock Wave Interaction With L-Shaped Structures, Richard C. Miller

Theses and Dissertations

This study investigated the interaction of shock waves with L-shaped structures using the CTH hydrodynamics code developed by Sandia National Laboratories. Computer models of shock waves traveling through air were developed using techniques similar to shock tube experiments. Models of L-shaped buildings were used to determine overpressures achieved by the reflecting shock versus angle of incidence of the shock front. An L-shaped building model rotated 45 degrees to the planar shock front produced the highest reflected overpressure of 9.73 atmospheres in the corner joining the two wings, a value 9.5 times the incident overpressure of 1.02 atmospheres. The same L-shaped …


Excited Atomic Bromine Energy Transfer And Quenching Mechanisms, Ray O. Johnson Aug 1993

Excited Atomic Bromine Energy Transfer And Quenching Mechanisms, Ray O. Johnson

Theses and Dissertations

Pulsed and steady-state photolysis experiments have been conducted to determine the rate coefficients for collisional deactivation of the spin-orbit excited state of atomic bromine, Br(2p1/2). Pulsed lifetime studies for quenching by Br2 and CO2, established absolute rate coefficients at room temperature of kBr2 = 1.2 ± 0.1 x 10-12 and kCO2 = 1.5 ± 0.2 x 10-11 cm3/molecule-s. Steady-state photolysis methods were used to determine the quenching rates for the rare gases, N2, 02, H2, D2, NO, …


Linear Characteristic Spatial Quadrature For Discrete Ordinates Neutral Particle Transport On Arbitrary Triangles, Dennis J. Miller Jun 1993

Linear Characteristic Spatial Quadrature For Discrete Ordinates Neutral Particle Transport On Arbitrary Triangles, Dennis J. Miller

Theses and Dissertations

A new discrete ordinates spatial quadrature for arbitrary triangular cells is derived and compared to its rectangular cell linear characteristic counterpart. The triangular mesh is more flexible, allowing curved surfaces and off-axis angles to be approximated with many fewer spatial cells. The triangle method is consistently more accurate on example problems tested here. Arbitrary orientation and size of the triangles allow non-patterned meshes to be developed which appears to ameliorate numerical diffusion. The triangle linear characteristic quadrature converges at nearly the same rate as rectangular Linear characteristic on Lathrop's problem. Mesh sensitivity measurements show large variations in triangle vertex locations …


Gamma Dose To A Fetus From Internal And External Sources, Lisa Stiles Jan 1993

Gamma Dose To A Fetus From Internal And External Sources, Lisa Stiles

Opportunities for Undergraduate Research Experience Program (OURE)

The purpose of this study was to use the QAD computer code to calculate the dose received by a fetus from external and internal sources to which the mother is exposed. The changes in Chapter 10, part 20 of the Code of Federal Regulations that will be put into effect January 1, 1994, will require that radiation doses be reported not only for the whole body but to specific organs and the fetus as well. Fortunately, the computer program QAD can provide health physicists and other persons responsible for monitoring radiation exposure of individuals with an accurate, easy to use …


Using Modulated Beam Mass Spectrometry Techniques To Determine Hydrogen Levels In Single Crystal And Etched Single Crystal Silicon, Gregory J. Teets Jan 1993

Using Modulated Beam Mass Spectrometry Techniques To Determine Hydrogen Levels In Single Crystal And Etched Single Crystal Silicon, Gregory J. Teets

Opportunities for Undergraduate Research Experience Program (OURE)

Silicon is an important element that has many applications ranging from semiconductors to solar cells. The quantity, diffusion, and bonding of hydrogen atoms in the silicon can play an important role in the electrical characteristics of single crystal and etched single crystal silicon. The hydrogen bonds to the impurities and to the dangling bonds in the silicon and reduces current leakage and improves performance [1-4]. Until now hydrogen bonding data has been extrapolated from related studies to determine hydrogen evolution temperatures from the silicon. Abrefah, Olander, et al. [1] studied deuterium evolution from silicon where the deuterium had been implanted …