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Full-Text Articles in Nanoscience and Nanotechnology
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems
The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs.
Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang
Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang
Journal of Electrochemistry
The SiNWs electrodes were fabricated by coating and direct growth methods,respectively.The structure,morphology and electrochemical performance of such materials were characterized by XRD,SEM and charge-discharge tests.The results show that the electrodes prepared by direct growth method had higher capacity,better battery life and also displayed and excellent cyclability at higher currents.During the process of lithiation,the initial crystalline Si transformed to amorphous LixSi,and the average diameter of the SiNWs increased.Despite the large volume changed,the SiNWs remained intact and did not break into smaller particles.