Nanoscience and Nanotechnology Commons^™

Radiation Effects In Gate-All-Around Silicon Nanowire Mosfets And Carbon Nanotube P-N Diodes, Everett Steven Comfort

Legacy Theses & Dissertations (2009 - 2024)

The scaling of MOSFETs has resulted in short channel effects that increase their power consumption above acceptable levels. In order to lower the power dissipation, new device designs and materials are being considered. For example, multiple-gate MOSFETs, including the gate-all-around silicon nanowire (GAA SiNW) MOSFET, are known to reduce short channel effects. Furthermore, new high-mobility channel materials such as single-walled carbon nanotubes (SWNTs) can be integrated to allow for further scaling of the supply voltage, again aiding in lowering power dissipation.