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Growth And Characterization Of Gallium Nitride Nanowire Leds For Application As On-Chip Optical Interconnects, Matt Brubaker
Mechanical Engineering Graduate Theses & Dissertations
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can be functionally integrated with silicon MEMS and IC devices. This dissertation presents an overview of the synthesis, characterization, and application of GaN nanowire light-emitting-diodes (LEDs) grown by plasma-assisted molecular beam epitaxy (MBE). Specifically, this research demonstrates discrete axial p-n junction nanowires that produce ultra-violet (UV) electroluminescence at ~40 nW optical power. It further demonstrates that a two-nanowire optical interconnect device can be fabricated from axial p-n junction nanowires with light-emitting and photoconductive capabilities. The nanowire structures obtained from MBE growth were found to depend sensitively on the ...