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Nanoscience and Nanotechnology Commons

Open Access. Powered by Scholars. Published by Universities.®

Nanotechnology

Selected Works

Electrical and Computer Engineering

Mehmet R. Dokmeci

Articles 1 - 2 of 2

Full-Text Articles in Nanoscience and Nanotechnology

Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao Jun 2011

Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao

Mehmet R. Dokmeci

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.


Directed Assembly Of Gold Nanoparticle Nanowires And Networks For Nanodevices, Xugang Xiong, Ahmed A. Busnaina, Selvapraba Selvarasah, Sivasubramanian Somu, Ming Wei, Joey Mead, Chia-Ling Chen, Juan Aceros, Prashanth Makaram, Mehmet R. Dokmeci May 2011

Directed Assembly Of Gold Nanoparticle Nanowires And Networks For Nanodevices, Xugang Xiong, Ahmed A. Busnaina, Selvapraba Selvarasah, Sivasubramanian Somu, Ming Wei, Joey Mead, Chia-Ling Chen, Juan Aceros, Prashanth Makaram, Mehmet R. Dokmeci

Mehmet R. Dokmeci

Alternating electric field is used to assemble gold nanoparticle nanowires from liquid suspensions. The effects of electrode geometry and the dielectrophoresis force on the chaining and branching of nanowire formation are investigated. The nanowire assembly processes are modeled using finite element calculations, and the particle trajectories under the combined influence of dielectrophoresis force and viscous drag are simulated. Nanoparticle nanowires with 10 nm resolution are fabricated. The wires can be further oriented along an externally introduced flow. This work provides an approach towards rapid assembly and organization of ultrasmall nanoparticle networks.