Open Access. Powered by Scholars. Published by Universities.®

Nanoscience and Nanotechnology Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 3 of 3

Full-Text Articles in Nanoscience and Nanotechnology

Mechanical And Electrical Evaluation Of Parylene-C Encapsulated Carbon Nanotube Networks On A Flexible Substrate, Chia-Ling Chen, Ernesto Lopez, Yung-Joon Jung, Sinan Müftü, Selvapraba Selvarasah, Mehmet R. Dokmeci May 2011

Mechanical And Electrical Evaluation Of Parylene-C Encapsulated Carbon Nanotube Networks On A Flexible Substrate, Chia-Ling Chen, Ernesto Lopez, Yung-Joon Jung, Sinan Müftü, Selvapraba Selvarasah, Mehmet R. Dokmeci

Yung Joon Jung

Carbon nanotube networks are an emerging conductive nanomaterial with applications including thin film transistors, interconnects, and sensors. In this letter, we demonstrate the fabrication of single-walled carbon nanotube (SWNT) networks on a flexible polymer substrate and then provide encapsulation utilizing a thin parylene-C layer. The encapsulated SWNT network was subjected to tensile tests while its electrical resistance was monitored. Tests showed a linear-elastic response up to a strain value of 2.8% and nearly linear change in electrical resistance in the 0%–2% strain range. The networks’ electrical resistance was monitored during load-unload tests of up to 100 cycles and was hysteresis-free.


Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan May 2011

Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan

Yung Joon Jung

High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.


Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer May 2011

Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer

Yung Joon Jung

The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.