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Articles 1 - 6 of 6
Full-Text Articles in Nanoscience and Nanotechnology
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman
Donald Heiman
Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.
Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao
Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao
Mehmet R. Dokmeci
We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.
Mechanical And Electrical Evaluation Of Parylene-C Encapsulated Carbon Nanotube Networks On A Flexible Substrate, Chia-Ling Chen, Ernesto Lopez, Yung-Joon Jung, Sinan Müftü, Selvapraba Selvarasah, Mehmet Dokmeci
Mechanical And Electrical Evaluation Of Parylene-C Encapsulated Carbon Nanotube Networks On A Flexible Substrate, Chia-Ling Chen, Ernesto Lopez, Yung-Joon Jung, Sinan Müftü, Selvapraba Selvarasah, Mehmet Dokmeci
Sinan Müftü
Carbon nanotube networks are an emerging conductive nanomaterial with applications including thin film transistors, interconnects, and sensors. In this letter, we demonstrate the fabrication of single-walled carbon nanotube (SWNT) networks on a flexible polymer substrate and then provide encapsulation utilizing a thin parylene-C layer. The encapsulated SWNT network was subjected to tensile tests while its electrical resistance was monitored. Tests showed a linear-elastic response up to a strain value of 2.8% and nearly linear change in electrical resistance in the 0%–2% strain range. The networks’ electrical resistance was monitored during load-unload tests of up to 100 cycles and was hysteresis-free.
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Yung Joon Jung
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.
Nanoengineering Of A Negative-Index Binary-Staircase Lens For The Optics Regime, Bernard Didier Casse, Ravinder Banyal, W. Lu, Y. Huang, Selvapraba Selvarasah, Mehmet Dokmeci, Srinivas Sridhar
Nanoengineering Of A Negative-Index Binary-Staircase Lens For The Optics Regime, Bernard Didier Casse, Ravinder Banyal, W. Lu, Y. Huang, Selvapraba Selvarasah, Mehmet Dokmeci, Srinivas Sridhar
Srinivas Sridhar
We show that a binary-staircase optical element can be engineered to exhibit an effective negative index of refraction, thereby expanding the range of optical properties theoretically available for future optoelectronic devices. The mechanism for achieving a negative-index lens is based on exploiting the periodicity of the surface corrugation. By designing and nanofabricating a planoconcave binary-staircase lens in the InP/InGaAsP platform, we have experimentally demonstrated at 1.55 μm that such negative-index concave lenses can focus plane waves. The beam propagation in the lens was studied experimentally and was in excellent agreement with the three-dimensional finite-difference time-domain numerical simulations.