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Full-Text Articles in Nanoscience and Nanotechnology
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Yung Joon Jung
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.