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Full-Text Articles in Nanoscience and Nanotechnology
Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes
Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes
Materials Engineering
Fluorescence profiles of quantum dots (QDs) were characterized to select the ideal QDs for encapsulation in phospholipids for use as biomarkers to selectively adhere to cancer cells. QDs were synthesized and extracted 0, 30, 60, and 90 seconds after precursor compounds were mixed. These extractions were isolated by extraction time. Portions from each vial were coated in a zinc sulfide shelling procedure, leaving at least half of the QD solution unshelled. These samples were characterized over four days to monitor fluctuations in fluorescence. This was done utilizing an Ocean Optics spectrometer in conjunction with Spectra Suite software. The central wavelength, …
Application Of Quantum Dots Onto Glass Wafers As A Feasibility Test For The Spectral Down Conversion Of Uv Light For Solar Cells, Anthony Fong
Materials Engineering
Quantum dots have the ability to convert high energy photons into multiple lower energy photons. Down conversion of such high energy photons from sources such as UV light can be beneficial for applications on solar cells which waste much of the energy in the form of thermalization. To test this theory, a solar cell was hooked up to an Amprobe Solar Analyzer and tests were run to compare power output with and without the presence of quantum dots. Additionally, quantum dots were spin coated onto a glass wafer to determine its adhesion ability. Spectrometer readings were taken of the wafer …
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …