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Articles 1 - 8 of 8
Full-Text Articles in Nanoscience and Nanotechnology
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar
High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar
Srinivas Sridhar
The authors demonstrate a nanofabrication method utilizing nanoporous alumina templates which involves directed three dimensional assembly of nanoparticles inside the pores by means of an electrophoretic technique. In their demonstration, they have assembled polystyrene nanobeads with diameter of 50 nm inside nanopore arrays of height of 250 nm and diameter of 80 nm. Such a technique is particularly useful for large-scale, rapid assembly of nanoelements for potential device applications.
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Legacy Theses & Dissertations (2009 - 2024)
Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …
Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang
Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang
Electrical & Computer Engineering Faculty Research
Hot spots have the contradictively geometrical requirements for both the narrowest interstices to provide strong near-field coupling, and sufficient space to allow entrance of the analytes. Herein, a two-step method is employed to create hot spots within hybrid nanostructures, which consist of self-supported nanoporous gold films with the absorbed probes and subsequent nanoparticle conjugates without surface agents or mechanical motion. The molecules confined into 1 nm interstice exhibit 2.9 × 107 times enhancement in Raman scattering compared to pure nanoporous gold. Giant enhancement primarily results from strong near-field coupling between nanopore and nanoparticle, which is theoretically confirmed by finite-difference …
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
Legacy Theses & Dissertations (2009 - 2024)
The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
Electrical & Computer Engineering Faculty Research
Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …