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High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya

Masters Theses

Sneak path current is a significant remaining obstacle to the utilization of large crossbar arrays for non-volatile memories and other applications of memristors. A two-terminal selector device with an extremely large current-voltage nonlinearity and low leakage current could solve this problem. We present here a Ag/oxide-based threshold switching (TS) device with attractive features such as high current-voltage nonlinearity (~10¹⁰), steep turn-on slope (less than 1 mV/dec), low OFF-state leakage current (~10^-14 A), fast turn ON/OFF speeds (<75/250 ns), and good endurance (>10⁸ cycles). The feasibility of using this selector with a typical memristor has been demonstrated by physically integrating them …