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Alumina; aluminium; annealing; band structure; ellipsometry; gallium arsenide; III-V semiconductors; indium compounds; MIS structures; photoelectron spectra
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Full-Text Articles in Nanoscience and Nanotechnology
Band Offsets Of Al2o3/Inxga1-Xas (X=0.53 And 0.75) And The Effects Of Postdeposition Annealing, N V. Nguyen, M Xu, O A. Kirillov, P. D. Ye, C Wang, K Cheung, J S. Suehle
Band Offsets Of Al2o3/Inxga1-Xas (X=0.53 And 0.75) And The Effects Of Postdeposition Annealing, N V. Nguyen, M Xu, O A. Kirillov, P. D. Ye, C Wang, K Cheung, J S. Suehle
Birck and NCN Publications
Band offsets at the interfaces of InxGa1-xAs/Al2O3/Al where x=0.53 and 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs/Al2O3 interface was found to be insensitive to the indium composition but shifted to a lower energy after a postdeposition annealing at high temperatures. Subthreshold electron photoemission was also observed for the annealed sample and was attributed to interfacial layer formation during the annealing process.