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Ballistic transport; band structure; carrier mobility; effective mass; elemental semiconductors; MOSFET; nanowires; semiconductor device models; semiconductor quantum wires; silicon; tight-binding calculations
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Full-Text Articles in Nanoscience and Nanotechnology
On The Bandstructure Velocity And Ballistic Current Of Ultra-Narrow Silicon Nanowire Transistors As A Function Of Cross Section Size, Orientation, And Bias, Neophytos Neophytou, Sung-Geun Kim, Gerhard Klimeck, Hans Kosina
On The Bandstructure Velocity And Ballistic Current Of Ultra-Narrow Silicon Nanowire Transistors As A Function Of Cross Section Size, Orientation, And Bias, Neophytos Neophytou, Sung-Geun Kim, Gerhard Klimeck, Hans Kosina
Birck and NCN Publications
A 20 band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with a semiclassical, ballistic field-effect-transistor model, to theoretically examine the bandstructure carrier velocity and ballistic current in silicon nanowire (NW) transistors. Infinitely long, uniform, cylindrical, and rectangular NWs, of cross sectional diameters/sides ranging from 3-12 nm are considered. For a comprehensive analysis, n-type and p-type metal-oxide semiconductor (NMOS and PMOS) NWs in [100], [110], and [111] transport orientations are examined. In general, physical cross section reduction increases velocities, either by lifting the heavy mass valleys or significantly changing the curvature of the bands. The carrier velocities of PMOS [110] …