Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
-
- Physical Sciences and Mathematics (48)
- Materials Science and Engineering (38)
- Chemistry (29)
- Electrical and Computer Engineering (28)
- Chemical Engineering (26)
-
- Engineering Science and Materials (25)
- Mechanical Engineering (25)
- Physical Chemistry (25)
- Materials Chemistry (23)
- Physics (20)
- Power and Energy (15)
- Catalysis and Reaction Engineering (14)
- Fluid Dynamics (12)
- Applied Mechanics (10)
- Mechanics of Materials (9)
- Other Mechanical Engineering (9)
- Transport Phenomena (9)
- Nanotechnology Fabrication (8)
- Applied Mathematics (7)
- Non-linear Dynamics (7)
- Numerical Analysis and Computation (7)
- Other Engineering Science and Materials (7)
- Partial Differential Equations (7)
- Electrical and Electronics (6)
- Biomedical Engineering and Bioengineering (5)
- Electro-Mechanical Systems (5)
- Polymer and Organic Materials (5)
- Semiconductor and Optical Materials (5)
- Institution
-
- Purdue University (88)
- Chinese Chemical Society | Xiamen University (18)
- University of Nebraska - Lincoln (15)
- SelectedWorks (11)
- Technological University Dublin (8)
-
- Western Kentucky University (7)
- Selected Works (6)
- University of Nevada, Las Vegas (6)
- Iowa State University (5)
- Portland State University (5)
- University at Albany, State University of New York (4)
- Air Force Institute of Technology (3)
- Old Dominion University (3)
- Clemson University (2)
- California Polytechnic State University, San Luis Obispo (1)
- Montana Tech Library (1)
- University of Tennessee, Knoxville (1)
- Keyword
-
- Carbon nanotubes (7)
- Sensors (5)
- Conference Papers (4)
- MEMS (4)
- Nanoparticles (4)
-
- Catalysis (3)
- Electrospinning (3)
- Nanostructures (3)
- RF MEMS (3)
- Alumina; anodisation; electrodeposition; nanofabrication; nanowires; porous materials; thermoelectric devices (2)
- Antennas; fluorescence; lenses; silver; surface enhanced Raman scattering (2)
- BISMUTH TELLURIDE NANOWIRES; HEXAGONAL PORE ARRAYS; HIGH-ASPECT-RATIO; ACID-SOLUTION; LARGE-AREA; FABRICATION; ELECTRODEPOSITION; ANODIZATION; GROWTH; FILMS (2)
- Chemical sensors (2)
- Composites (2)
- DNA (2)
- Direct methanol fuel cell (2)
- ELECTRONIC-PROPERTIES; EPITAXIAL GRAPHENE; SILICON-CARBIDE; GRAPHITE; 6H-SIC(0001); LAYERS; FILMS (2)
- Elemental semiconductors; germanium; molecular dynamics method; nanostructured materials; potential energy functions; semiconductor heterojunctions; silicon; stress relaxation (2)
- Fabrication (2)
- Heterogeneous catalysis (2)
- Inhomogeneous fluid (2)
- MOBILITY (2)
- Molecular dynamics (2)
- Multiscale Modeling (2)
- Multiscale modeling (2)
- NEMO 3-D; STATES; COMPUTER; ATOM; DOTS; SEMICONDUCTORS (2)
- Nanocrystals (2)
- Nanostructured materials (2)
- Nanotechnology (2)
- Presentations (2)
- Publication
-
- Birck and NCN Publications (63)
- PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems (19)
- Journal of Electrochemistry (18)
- Articles (8)
- Nebraska Center for Materials and Nanoscience: Faculty Publications (8)
-
- Department of Mechanical and Materials Engineering: Faculty Publications (7)
- Other Nanotechnology Publications (6)
- Mathematics Faculty Publications (5)
- Matteo Rinaldi (5)
- UNLV Theses, Dissertations, Professional Papers, and Capstones (5)
- Legacy Theses & Dissertations (2009 - 2024) (4)
- Physics Faculty Publications and Presentations (4)
- Jonathan J Stanger (3)
- João F Gomes (3)
- Theses and Dissertations (3)
- Wenyu Huang (3)
- All Dissertations (2)
- Eng-Poh Ng (2)
- Mikhail Khenner (2)
- Andrea Fernandez-Ribas (1)
- Biological Sciences Faculty Publications (1)
- Center for Electron Microscopy and Nanofabrication Publications and Presentations (1)
- Chemistry & Biochemistry Theses & Dissertations (1)
- David Keffer (1)
- Faculty Publications and Other Works -- Chemical and Biomolecular Engineering (1)
- Ganesh Balasubramanian (1)
- Master's Theses (1)
- Mechanical & Aerospace Engineering Faculty Publications (1)
- Mechanical Engineering (1)
- Mechanical Engineering Faculty Research (1)
- Publication Type
Articles 31 - 60 of 184
Full-Text Articles in Nanoscience and Nanotechnology
Atomistic Full-Band Simulations Of Silicon Nanowire Transistors: Effects Of Electron-Phonon Scattering, Mathieu Luisier, Gerhard Klimeck
Atomistic Full-Band Simulations Of Silicon Nanowire Transistors: Effects Of Electron-Phonon Scattering, Mathieu Luisier, Gerhard Klimeck
Birck and NCN Publications
An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si nanowire field-effect transistors in the presence of electron-phonon scattering. The nonequilibrium Green's function (NEGF) formalism is solved in a nearest-neighbor sp(3)d(5)s* tight-binding basis. The scattering self-energies are derived in the self-consistent Born approximation to inelastically couple the full electron and phonon energy spectra. The band dispersion and the eigenmodes of the confined phonons are calculated using a dynamical matrix that includes the bond and the angle deformations of the nanowires. The optimization of the numerical algorithms and the parallelization of the NEGF scheme enable the investigation of …
Orbital Stark Effect And Quantum Confinement Transition Of Donors In Silicon, Rajib Rahman, G P. Lansbergen, Seung H. Park, J Verduijn, Gerhard Klimeck, S Rogge, Lloyd Cl Hollenberg
Orbital Stark Effect And Quantum Confinement Transition Of Donors In Silicon, Rajib Rahman, G P. Lansbergen, Seung H. Park, J Verduijn, Gerhard Klimeck, S Rogge, Lloyd Cl Hollenberg
Birck and NCN Publications
Adiabatic shuttling of single impurity bound electrons to gate-induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in silicon buried close to a gate. Here, we present the full theoretical model involving large-scale quantum mechanical simulations that was used to compute the Stark shifted donor states in order to interpret the experimental data. Use of atomistic tight-binding technique on a domain of over a million atoms helped …
Orbital Stark Effect And Quantum Confinement Transition Of Donors In Silicon, Rajib Rahman, G P. Lansbergen, Seung H. Park, J Verduijn, Gerhard Klimeck, S Rogge, Lloyd Cl Hollenberg
Orbital Stark Effect And Quantum Confinement Transition Of Donors In Silicon, Rajib Rahman, G P. Lansbergen, Seung H. Park, J Verduijn, Gerhard Klimeck, S Rogge, Lloyd Cl Hollenberg
Birck and NCN Publications
Adiabatic shuttling of single impurity bound electrons to gate-induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in silicon buried close to a gate. Here, we present the full theoretical model involving large-scale quantum mechanical simulations that was used to compute the Stark shifted donor states in order to interpret the experimental data. Use of atomistic tight-binding technique on a domain of over a million atoms helped …
Gate-Induced G-Factor Control And Dimensional Transition For Donors In Multivalley Semiconductors, Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, Lloyd Cl Hollenberg
Gate-Induced G-Factor Control And Dimensional Transition For Donors In Multivalley Semiconductors, Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, Lloyd Cl Hollenberg
Birck and NCN Publications
The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework, the spin-orbit Stark parameters are computed for donors in multivalley semiconductors, silicon, and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate-induced transition from three-dimensional to two-dimensional wave-function confinement show …
Impact Of Sacrificial Layer Type On Thin-Film Metal Residual Stress, Anurag Garg, Joshua A. Small, Xiaoguang Liu, Ajit Mahapatro, Dimitrios Peroulis
Impact Of Sacrificial Layer Type On Thin-Film Metal Residual Stress, Anurag Garg, Joshua A. Small, Xiaoguang Liu, Ajit Mahapatro, Dimitrios Peroulis
Birck and NCN Publications
In this paper we study the impact of two sacrificial layers on the final residual stress of thin gold films. In particular, we comapre a typical photoresist layer (Shipley SC1827) to single-crystalline silicon. We fabricate and measure cantilever beams on both sacrificial layers and study their residual stresses by analyzing the final displacement profile of the released beams. All samples were fabricated at the same time and under identical conditions. The study clearly shows that the induced stress on thin films is dependent on the sacrificial layer. The gold film deposited over the single-crystalline silicon shows nearly zero gradient stress …
Observation Of Quantum-Hall Effect In Gated Epitaxial Graphene Grown On Sic (0001), T Shen, J J. Gu, Y Q. Wu, M L. Bolen, Michael A. Capano, L W. Engel, P. D. Ye
Observation Of Quantum-Hall Effect In Gated Epitaxial Graphene Grown On Sic (0001), T Shen, J J. Gu, Y Q. Wu, M L. Bolen, Michael A. Capano, L W. Engel, P. D. Ye
Birck and NCN Publications
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001).
Molecular Dynamics Simulations Of Lattice Thermal Conductivity Of Bismuth Telluride Using Two-Body Interatomic Potentials, Bo Qiu, X Ruan
Molecular Dynamics Simulations Of Lattice Thermal Conductivity Of Bismuth Telluride Using Two-Body Interatomic Potentials, Bo Qiu, X Ruan
Birck and NCN Publications
Two-body interatomic potentials in the Morse potential form have been developed for bismuth telluride, and the potentials are used in molecular dynamics simulations to predict the thermal conductivity. The density-functional theory with local-density approximations is first used to calculate the total energies for many artificially distorted Bi2Te3 configurations to produce the energy surface. Then by fitting to this energy surface and other experimental data, the Morse potential form is parameterized. The fitted empirical interatomic potentials are shown to reproduce the elastic and phonon data well. Molecular dynamics simulations are then performed to predict the thermal conductivity of bulk Bi2Te3 at …
Sers In Salt Wells, G. V. Pavan Kumar, Joseph Irudayaraj
Sers In Salt Wells, G. V. Pavan Kumar, Joseph Irudayaraj
Birck and NCN Publications
We report herein a simple, inexpensive fabrication methodology of salt microwells, and define the utility of the latter as nanoparticle containers for highly sensitive surface-enhanced Raman scattering (SERS) studies. AFM characterization of Ag and Au loaded salt microwells reveal the ability to contain favorable nanostructures such as nanoparticle dimers, which can significantly enhance the Raman intensity of molecules. By performing diffraction-limited confocal Raman microscopy on salt microwells, we show high sensitivity and fidelity in the detection of dyes, peptides, and proteins, as a proof of our concept. The SERS limit of detection (accumulation time of 1 s) for rhodamine B …
Molecular Dynamics Simulations Of Lattice Thermal Conductivity Of Bismuth Telluride Using Two-Body Interatomic Potentials, Bo Qiu, X Ruan
Molecular Dynamics Simulations Of Lattice Thermal Conductivity Of Bismuth Telluride Using Two-Body Interatomic Potentials, Bo Qiu, X Ruan
Birck and NCN Publications
Two-body interatomic potentials in the Morse potential form have been developed for bismuth telluride, and the potentials are used in molecular dynamics simulations to predict the thermal conductivity. The density-functional theory with local-density approximations is first used to calculate the total energies for many artificially distorted Bi2Te3 configurations to produce the energy surface. Then by fitting to this energy surface and other experimental data, the Morse potential form is parameterized. The fitted empirical interatomic potentials are shown to reproduce the elastic and phonon data well. Molecular dynamics simulations are then performed to predict the thermal conductivity of bulk Bi2Te3 at …
Determination Of Size Effects During The Phase Transition Of A Nanoscale Au-Si Eutectic, B J. Kim, J Tersoff, C Y. Wen, M C. Reuter, E A. Stach, F M. Ross
Determination Of Size Effects During The Phase Transition Of A Nanoscale Au-Si Eutectic, B J. Kim, J Tersoff, C Y. Wen, M C. Reuter, E A. Stach, F M. Ross
Birck and NCN Publications
The phase diagram of a nanoscale system can be substantially different than in the bulk, but quantitative measurements have proven elusive. Here we use in situ microscopy to observe a phase transition in a nanoscale system, together with a simple quantitative model to extract the size effects from these measurements. We expose a Au particle to disilane gas, and observe the transition from a two-phase Au + AuSi system to single-phase AuSi. Size effects are evident in the nonlinear disappearance of the solid Au. Our analysis shows a substantial shift in the liquidus line, and a discontinuous change in the …
Solvent Dependent Morphologies In Thiol-Ene Photopolymerization: A Facile Route To Synthesis Of Resorcinarene Nanocapsules, Zaharoula Marie Kalaitzis
Solvent Dependent Morphologies In Thiol-Ene Photopolymerization: A Facile Route To Synthesis Of Resorcinarene Nanocapsules, Zaharoula Marie Kalaitzis
Chemistry & Biochemistry Theses & Dissertations
Synthesis of morphologically distinct polymeric nanostructures is vital for their wide ranging applications from nanomedicine to material science. Among various polymeric nanostructures, nanocapsules in particular have attracted a lot of attention as nanoreactors and drug delivery vehicles in nanomedicine. Often, synthesis of nanocapsules is achieved by template-based approaches. A direct, template-free method for the fabrication of nanocapsules and a variety of other morphologically distinct polymeric architectures was developed. The photopolymerization of a resorcinarene thiol-ene surfactant in various solvents lead to the formation of nanocapsules, nanoparticles, fibers, distorted honeycomb-like lattices, and sheets. The progress of the polymerization reaction and the morphology …
Squeeze-Film Damping Of Flexible Microcantilevers At Low Ambient Pressures: Theory And Experiment, Jin Woo Lee, Ryan Tung, Arvind Raman, Hartono Sumali, John Sullivan
Squeeze-Film Damping Of Flexible Microcantilevers At Low Ambient Pressures: Theory And Experiment, Jin Woo Lee, Ryan Tung, Arvind Raman, Hartono Sumali, John Sullivan
PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems
An improved theoretical approach is proposed to predict the dynamic behavior of long, slender and flexible microcantilevers affected by squeeze-film damping at low ambient pressures. Our approach extends recent continuum gas damping models which were originally derived for a rigid oscillating plate near a wall, to flexible microcantilevers for calculating and predicting squeeze-film damping ratios of higher order bending modes at reduced ambient pressures. Theoretical frequency response functions are derived for a flexible microcantilever beam excited both inertially and via external forcing. Experiments performed carefully at controlled gas pressures are used to validate our theoretical approach over five orders of …
Mapping Donor Electron Wave Function Deformations At A Sub-Bohr Orbit Resolution, Seung Park, Rajib Rahman, Gerhard Klimeck, Lloyd Cl Hollenberg
Mapping Donor Electron Wave Function Deformations At A Sub-Bohr Orbit Resolution, Seung Park, Rajib Rahman, Gerhard Klimeck, Lloyd Cl Hollenberg
Birck and NCN Publications
Quantum wave function engineering of dopant-based Si nanostructures reveals new physics in the solid state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the ability to accurately characterize the deformation of the electron wave functions in these atom-based structures through electric and magnetic field control. We present a method for mapping the subtle changes that occur in the electron wave function through the measurement of the hyperfine tensor probed by Si-29 impurities. We calculate Stark parameters for six shells around the donor. Our results show that detecting the donor …
Optically Induced Electrokinetic Patterning And Manipulation Of Particles, Stuart J. Williams, Aloke Kumar, Steven Wereley
Optically Induced Electrokinetic Patterning And Manipulation Of Particles, Stuart J. Williams, Aloke Kumar, Steven Wereley
Birck and NCN Publications
The ability to easily and dynamically control fluid mo- tion as well as manipulate particles in suspension is impor- tant for the development and characterization of a variety of lab-on-a-chip processes. Recently, we have introduced an op- tically induced electrokinetic technique termed rapid electro- kinetic patterning (REP) that can rapidly concentrate, trans- late, and pattern colloids of many different sizes and compositions. We have tested polystyrene, latex, and silica beads in sizes ranging from 49 nm to 3.0 um.1,2
Graphene Formation Mechanisms On 4h-Sic(0001), Michael Bolen, Sara E. Harrison, Laura B. Biedermann, Michael A. Capano
Graphene Formation Mechanisms On 4h-Sic(0001), Michael Bolen, Sara E. Harrison, Laura B. Biedermann, Michael A. Capano
Birck and NCN Publications
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth temperature and time are varied independently to gain a better understanding of how surface features and morphology affect graphene formation. Growth mechanisms of graphene are studied by ex situ atomic force microscopy (AFM) and scanning tunneling microscopy (STM). On the route toward a continuous graphene film, various growth features, such as macroscale step bunching, terrace pits, and fingers, are found and analyzed. Topographic and phase AFM analysis demonstrates how surface morphology changes with experimental conditions. Step-bunched terraces and terrace pits show a strong preference for …
Graphene Formation Mechanisms On 4h-Sic(0001), Michael Bolen, Sara E. Harrison, Laura Biedermann, Michael A. Capano
Graphene Formation Mechanisms On 4h-Sic(0001), Michael Bolen, Sara E. Harrison, Laura Biedermann, Michael A. Capano
Birck and NCN Publications
Graphene is created through thermal decomposition of the Si face of 4H-SiC in high-vacuum. Growth temperature and time are varied independently to gain a better understanding of how surface features and morphology affect graphene formation. Growth mechanisms of graphene are studied by ex situ atomic force microscopy (AFM) and scanning tunneling microscopy (STM). On the route toward a continuous graphene film, various growth features, such as macroscale step bunching, terrace pits, and fingers, are found and analyzed. Topographic and phase AFM analysis demonstrates how surface morphology changes with experimental conditions. Step-bunched terraces and terrace pits show a strong preference for …
Crystallization And Electrochemical Corrosion Behaviors Of Amorphous And Nanocrystalline Fe-Based Alloys, Xiang Li, Biao Yan, Peng Dong
Crystallization And Electrochemical Corrosion Behaviors Of Amorphous And Nanocrystalline Fe-Based Alloys, Xiang Li, Biao Yan, Peng Dong
Journal of Electrochemistry
In this study,amorphous Fe78Si13B9 and Fe73.5Si13.5B9Nb3Cu1 ribbons were prepared by the chill block melt-spinning process and nanocrystalline Fe73.5Si13.5B9Nb3Cu1 ribbons were obtained by annealing. The amorphous ribbons and their crystallization processes were identified by differential scanning calorimeter (DSC) and X-ray diffraction (XRD). A comparative study of the electrochemical corrosion behaviors of Fe78Si13B9 and Fe73.5Si13.5B9Nb3Cu1 amorphous and nanocrystallized alloys was performed by linear polarization method and electrochemical impedance spectroscopy (EIS) in 1mol/L NaOH solutions. The photographs of the samples after potentiodynamic polarization were observed by SEM. The influence of heat treatment on the alloys structure and corrosion resistance in 1mol/L NaOH solutions …
Redox State Of Polyaniline Nanodot And Its Coulomb Staircase Effect, Jian-Zhang Zhou, Shao-Huang Weng, Zhong-Hua Lin
Redox State Of Polyaniline Nanodot And Its Coulomb Staircase Effect, Jian-Zhang Zhou, Shao-Huang Weng, Zhong-Hua Lin
Journal of Electrochemistry
Polyaniline nanodot array had been fabricated in AAO template with potentiostatic method and the I~V characteristics of nanodots with different redox states were measured by conducting atomic force microscope (C-AFM) in atmosphere at room temperature. We found that only nanodots in partial oxidation state exhibit coulomb staircase in the I~V curves,while those in the full oxidation state and reduced state do not. The above phenomena were discussed preliminarily.
Electrocatalytic Oxidation Of Glucose On Cnt/Nanocrystlline Tio_2-Pt Complex Film Electrode In Ionic Liquids, Dao-Bao Chu, Long-Wu Zha, Shu-Xi Wang, Jian Wang, Ying Xiao, Yuan-Yuan Hou, Jian-Guo He, Xue-Jiao Zhang
Electrocatalytic Oxidation Of Glucose On Cnt/Nanocrystlline Tio_2-Pt Complex Film Electrode In Ionic Liquids, Dao-Bao Chu, Long-Wu Zha, Shu-Xi Wang, Jian Wang, Ying Xiao, Yuan-Yuan Hou, Jian-Guo He, Xue-Jiao Zhang
Journal of Electrochemistry
Using ionic liquid [EMI]BF4 as the electrolyte,the electrocatalytic oxidation of glucose on carbon nanotubes/nanocrystlline TiO2 film loaded on Pt (CNT/nanoTiO2-Pt) complex film electrode was investigated by cyclic voltammetry. The results found that the CNT/nanoTiO2-Pt complex electrode had high catalytic activity to the electrochemical oxidation of glucose in ionic liquids and the oxidation potential was -0.46 V. The best effect of glucose oxidation was obtained with the volume ratio of ionic liquid to water being 3∶1. The process of electrodic reaction process was concentration polarization controlled.
Synthesis And Characterization Of Sulfur-Carbonnanotubes As Cathode Of Lithium/Sulfur Rechargeable Battery, Rui Du, Zhong-Zhi Yuan
Synthesis And Characterization Of Sulfur-Carbonnanotubes As Cathode Of Lithium/Sulfur Rechargeable Battery, Rui Du, Zhong-Zhi Yuan
Journal of Electrochemistry
A carbon-containing composite was synthesized by heating element sulfur and carbon nanotubes. The sulfur-carbonnanotube composites were characterized by X-ray diffraction,SEM,Brunauer-Emmett-Teller.The electrochemical property was characterized by cyclic voltammetry,constant current charge and discharge.It was revealed that the sulfur-carbonnanotube cathode 2016-type coin cells exhibited a good electrochemical property with the initial dicharge specific capacity up to 680 mAh/g and a stable capacity approximately 500 mAh/g after 30 cycle numbers.
Strain Energy And Lateral Friction Force Distributions Of Carbon Nanotubes Manipulated Into Shapes By Atomic Force Microscopy, Mark C. Strus, Roya R. Lahiji, Pablo Ares, Vincente Lopez, Arvind Raman, Ron R. Reifenberger
Strain Energy And Lateral Friction Force Distributions Of Carbon Nanotubes Manipulated Into Shapes By Atomic Force Microscopy, Mark C. Strus, Roya R. Lahiji, Pablo Ares, Vincente Lopez, Arvind Raman, Ron R. Reifenberger
Other Nanotechnology Publications
The interplay between local mechanical strain energy and lateral frictional forces determines the shape of carbon nanotubes on substrates. In turn, because of its nanometer-size diameter, the shape of a carbon nanotube strongly influences its local electronic, chemical, and mechanical properties. Few, if any, methods exist for resolving the strain energy and static frictional forces along the length of a deformed nanotube supported on a substrate. We present a method using nonlinear elastic rod theory in which we compute the flexural strain energy and static frictional forces along the length of single walled carbon nanotubes (SWCNTs) manipulated into various shapes …
Self-Supporting Nanowire Arrays Templated In Sacrificial Branched Porous Anodic Alumina For Thermoelectric Devices, Kalapi G. Biswas, Hatem El Matbouly, Vijay Rawat, Jeremy L. Schroeder, Timothy D. Sands
Self-Supporting Nanowire Arrays Templated In Sacrificial Branched Porous Anodic Alumina For Thermoelectric Devices, Kalapi G. Biswas, Hatem El Matbouly, Vijay Rawat, Jeremy L. Schroeder, Timothy D. Sands
Birck and NCN Publications
Templated synthesis of thermoelectric nanowires in porous anodic alumina (PAA) have potential for enhanced performance relative to bulk materials. A significant challenge is the template material, which can serve as a thermal shunt. In this work, an approach for creating a branched PAA template is described. The process utilizes localized self-heating to destabilize the planar anodization front, yielding branched and interconnected pores growing at a rate of 300 mu m/h. The template is selectively etched after electrodeposition of desired materials, yielding self-supporting nanowire arrays with thicknesses up to about 300 mu m, thereby eliminating the thermal shunt through the template.
Thermionic Emission Energy Distribution From Nanocrystalline Diamond Films For Direct Thermal-Electrical Energy Conversion Applications, Kishore Uppireddi, Tyler Westover, Timothy Fisher, Brad H. Weiner, Gerardo Morell
Thermionic Emission Energy Distribution From Nanocrystalline Diamond Films For Direct Thermal-Electrical Energy Conversion Applications, Kishore Uppireddi, Tyler Westover, Timothy Fisher, Brad H. Weiner, Gerardo Morell
Birck and NCN Publications
In the ongoing quest for energy production by nonconventional methods, energy conversion by vacuum and solid-state thermionic emission devices is one of the potentially efficient pathways for converting thermal energy directly into electrical power. The realization of practical of thermionic energy conversion devices strongly depends on achieving low work function materials, which is thus far a limiting factor. In an attempt to develop a new low work function thermionic material, this work reports thermionic emission energy distributions (TEEDs) from nanocrystalline diamond (NCD) films in the temperature range from 700 to 900 degrees C that reveal a consistent effective work function …
Thermionic Emission Energy Distribution From Nanocrystalline Diamond Films For Direct Thermal-Electrical Energy Conversion Applications, Kishore Uppireddi, Tyler Westover, Timothy Fisher, Brad Weiner, Gerardo Morell
Thermionic Emission Energy Distribution From Nanocrystalline Diamond Films For Direct Thermal-Electrical Energy Conversion Applications, Kishore Uppireddi, Tyler Westover, Timothy Fisher, Brad Weiner, Gerardo Morell
Birck and NCN Publications
In the ongoing quest for energy production by nonconventional methods, energy conversion by vacuum and solid-state thermionic emission devices is one of the potentially efficient pathways for converting thermal energy directly into electrical power. The realization of practical of thermionic energy conversion devices strongly depends on achieving low work function materials, which is thus far a limiting factor. In an attempt to develop a new low work function thermionic material, this work reports thermionic emission energy distributions (TEEDs) from nanocrystalline diamond (NCD) films in the temperature range from 700 to 900 °C that reveal a consistent effective work function of …
Stable And Reproducible Electronic Conduction Through Dna Molecular Junctions, Ajit K. Mahapatro, Gil Lee, Kyung J. Jeong, David B. Janes
Stable And Reproducible Electronic Conduction Through Dna Molecular Junctions, Ajit K. Mahapatro, Gil Lee, Kyung J. Jeong, David B. Janes
Birck and NCN Publications
This letter presents the observation of stable and reproducible electronic conduction through double stranded (ds) DNA molecules in a nominally dry state. Stable conduction was realized by immobilizing 15 base-pair guanine:cytosine rich dsDNA within gold nanogap junctions, stabilizing the dsDNA with a polycation, and characterizing in nitrogen. In air, the current levels decrease with successive voltage scans likely due to oxidation of the guanine bases under bias. In nitrogen, reproducible current-voltage traces are observed and the current levels at specific bias points are stable with time. The stability allows comprehensive electrical studies and could enable conductance-based DNA sensors.
Self-Supporting Nanowire Arrays Templated In Sacrificial Branched Porous Anodic Alumina For Thermoelectric Devices, Kalapi G. Biswas, Hatem El Matbouly, Vijay Rawat, Jeremy L. Schroeder, Timothy D. Sands
Self-Supporting Nanowire Arrays Templated In Sacrificial Branched Porous Anodic Alumina For Thermoelectric Devices, Kalapi G. Biswas, Hatem El Matbouly, Vijay Rawat, Jeremy L. Schroeder, Timothy D. Sands
Birck and NCN Publications
Templated synthesis of thermoelectric nanowires in porous anodic alumina (PAA) have potential for enhanced performance relative to bulk materials. A significant challenge is the template material, which can serve as a thermal shunt. In this work, an approach for creating a branched PAA template is described. The process utilizes localized self-heating to destabilize the planar anodization front, yielding branched and interconnected pores growing at a rate of 300 mu m/h. The template is selectively etched after electrodeposition of desired materials, yielding self-supporting nanowire arrays with thicknesses up to about 300 mu m, thereby eliminating the thermal shunt through the template.
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Metin Atkulga, Ananth Y. Grama, Alejandro Strachan
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Metin Atkulga, Ananth Y. Grama, Alejandro Strachan
Birck and NCN Publications
We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads to transverse strain relaxation in the Ge section. This strain relaxation increases with increasing height of the Ge section and reduction in its width and is complete (i.e., zero transverse strain) for roughly square cross sections of Ge leading to a uniaxial strain state. Such strain state is desirable in some microelectronics applications. From the MD …
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Atkulga, Ananth Y. Grama, Alejandro Strachan
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Atkulga, Ananth Y. Grama, Alejandro Strachan
Birck and NCN Publications
We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads to transverse strain relaxation in the Ge section. This strain relaxation increases with increasing height of the Ge section and reduction in its width and is complete (i.e., zero transverse strain) for roughly square cross sections of Ge leading to a uniaxial strain state. Such strain state is desirable in some microelectronics applications. From the MD …
Modeling Of Subcontinuum Thermal Transport Across Semiconductor-Gas Interfaces, Dhruv Singh, Xiaohui Guo, Alina Alexeenko, Jayathi Y. Murthy, Timothy S. Fisher
Modeling Of Subcontinuum Thermal Transport Across Semiconductor-Gas Interfaces, Dhruv Singh, Xiaohui Guo, Alina Alexeenko, Jayathi Y. Murthy, Timothy S. Fisher
PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems
A physically rigorous computational algorithm is developed and applied to calculate subcontinuum thermal transport in structures containing semiconductor-gas interfaces. The solution is based on a finite volume discretization of the Boltzmann equation for gas molecules in the gas phase and phonons in the semiconductor. A partial equilibrium is assumed between gas molecules and phonons at the interface of the two media, and the degree of this equilibrium is determined by the accommodation coefficients of gas molecules and phonons on either side of the interface. Energy balance is imposed to obtain a value of the interface temperature. The classic problem of …
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …