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1996

Modulation-doped field-effect transistors

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A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part Ii: The Full Quantum Transport, Rahim Khoie Jan 1996

A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part Ii: The Full Quantum Transport, Rahim Khoie

Electrical & Computer Engineering Faculty Research

In Part I of this paper we reported a self-consistent Boltzmann-Schrodinger-Poisson simulator for HEMT in which only electrons in the first subband were assumed to be quantized with their motion restricted to 2 dimensions. In that model, the electrons in the second and higher subbands were treated as bulk system behaving as a 3 dimensional electron gas. In Part II of this paper, we extend our simulator to a self-consistent full-quantum model in which the electrons in the second subband are also treated as quantized 2 dimensional gas. In this model, we consider the electrons in the lowest two subbands …