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Graphene-Semiconductor Heterojunctions And Devices, Tzu-Min Ou
Electrical, Computer & Energy Engineering Graduate Theses & Dissertations
In this thesis we explore the potential of versatile graphene-semiconductor heterojunctions in photodetection and field-effect transistor (FET) applications. The first part of the thesis studies near-infrared photodiode (NIR PD) based on a graphene- n-Si heterojunction in which graphene is used as the absorbing medium. Graphene is chosen for its absorption in NIR wavelengths to which Si is not responsive. Most graphene detectors in the literature are photoconductors that have a high dark current. The graphene-Si heterojunction PD has a large Schottky barrier height that suppresses the dark current and enhances the current rectification and the photon detectivity.
The fabricated graphene-Si ...