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Carbon Allotrope Dependence On Temperature And Pressure During Thermal Decomposition Of Silicon Carbide, Munson J. Anderson

Theses and Dissertations

Bulk CNT and graphene films form on SiC using a metal-catalyst-free thermal decomposition approach. In this work, the background vacuum pressure and temperature used in the decomposition process are varied to investigate their impact on the type and quality of carbon allotrope formed on the SiC substrate. The carbon nanostructure growth is performed using two approaches, both of which involve intense heating (1400-1700°C) of SiC under moderate vacuum conditions (0.01 - 0.00001 Torr). The first growth method uses a conventional graphite resistance furnace capable of annealing waferscale samples over 1700°C under vacuum. Using this approach, post-growth characterization is performed using …